Study of ion beam mixing in C/Si multilayers by X-ray absorption spectroscopy

機構典藏 > College of Sciences > Graduate Institute & Department of Physics > Journal Article > Item 987654321/19551

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Title:	Study of ion beam mixing in C/Si multilayers by X-ray absorption spectroscopy
Authors:	Asokan, K.;Srivastava, S. K.;Kabiraj, D.;Mookerjee, S.;Avasthi, D. K.;Jan, J. C.;Chiou, J. W.;彭維鋒;Pong, W. F.;Ting, L. C.;錢凡之;Chien, F. Z.
貢獻者:	淡江大學物理學系
關鍵詞:	Ion beam mixing;XANES;Multilayers;Silicon carbide
日期:	2002-06
上傳時間:	2009-11-04 17:17:13 (UTC+8)
出版者:	Amsterdam:Elsevier BV
摘要:	The C/Si multilayers were prepared by electron beam evaporation in a cryo-pumped vacuum deposition system. These were characterized by X-ray diffraction before and after high-energy heavy ion, 120 MeV Au, irradiation. Soft Xray absorption spectra in the C K-edge region were measured using synchrotron radiation to identify the chemical bonding states of the Si and C. This study indicates that ion beam mixing induces SiC phase and carbon clusters. A significant increase in the intensity of pre-edge peak of C K-edge, assigned to p , is observed in the irradiated C/Si multilayer sample. It is intriguing to note such sharp increase in intensity after irradiation that may be associated with the effect of large electronic excitation energy transferred by energetic Au ions.
關聯:	Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 193(1-4), pp.324-328
DOI:	10.1016/S0168-583X(02)00799-1
顯示於類別:	[Graduate Institute & Department of Physics] Journal Article

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