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    Please use this identifier to cite or link to this item: http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/19551


    Title: Study of ion beam mixing in C/Si multilayers by X-ray absorption spectroscopy
    Authors: Asokan, K.;Srivastava, S. K.;Kabiraj, D.;Mookerjee, S.;Avasthi, D. K.;Jan, J. C.;Chiou, J. W.;彭維鋒;Pong, W. F.;Ting, L. C.;錢凡之;Chien, F. Z.
    Contributors: 淡江大學物理學系
    Keywords: Ion beam mixing;XANES;Multilayers;Silicon carbide
    Date: 2002-06
    Issue Date: 2009-11-04 17:17:13 (UTC+8)
    Publisher: Amsterdam:Elsevier BV
    Abstract: The C/Si multilayers were prepared by electron beam evaporation in a cryo-pumped vacuum deposition system. These were characterized by X-ray diffraction before and after high-energy heavy ion, 120 MeV Au, irradiation. Soft Xray absorption spectra in the C K-edge region were measured using synchrotron radiation to identify the chemical bonding states of the Si and C. This study indicates that ion beam mixing induces SiC phase and carbon clusters. A significant increase in the intensity of pre-edge peak of C K-edge, assigned to p , is observed in the irradiated C/Si multilayer sample. It is intriguing to note such sharp increase in intensity after irradiation that may be associated with the effect of large electronic excitation energy transferred by energetic Au ions.
    Relation: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 193(1-4), pp.324-328
    DOI: 10.1016/S0168-583X(02)00799-1
    Appears in Collections:[物理學系暨研究所] 期刊論文

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