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    題名: Study of ion beam mixing in C/Si multilayers by X-ray absorption spectroscopy
    作者: Asokan, K.;Srivastava, S. K.;Kabiraj, D.;Mookerjee, S.;Avasthi, D. K.;Jan, J. C.;Chiou, J. W.;彭維鋒;Pong, W. F.;Ting, L. C.;錢凡之;Chien, F. Z.
    貢獻者: 淡江大學物理學系
    關鍵詞: Ion beam mixing;XANES;Multilayers;Silicon carbide
    日期: 2002-06
    上傳時間: 2009-11-04 17:17:13 (UTC+8)
    出版者: Amsterdam:Elsevier BV
    摘要: The C/Si multilayers were prepared by electron beam evaporation in a cryo-pumped vacuum deposition system. These were characterized by X-ray diffraction before and after high-energy heavy ion, 120 MeV Au, irradiation. Soft Xray absorption spectra in the C K-edge region were measured using synchrotron radiation to identify the chemical bonding states of the Si and C. This study indicates that ion beam mixing induces SiC phase and carbon clusters. A significant increase in the intensity of pre-edge peak of C K-edge, assigned to p , is observed in the irradiated C/Si multilayer sample. It is intriguing to note such sharp increase in intensity after irradiation that may be associated with the effect of large electronic excitation energy transferred by energetic Au ions.
    關聯: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 193(1-4), pp.324-328
    DOI: 10.1016/S0168-583X(02)00799-1
    顯示於類別:[物理學系暨研究所] 期刊論文

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