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    题名: Study of ion beam mixing in C/Si multilayers by X-ray absorption spectroscopy
    作者: Asokan, K.;Srivastava, S. K.;Kabiraj, D.;Mookerjee, S.;Avasthi, D. K.;Jan, J. C.;Chiou, J. W.;彭維鋒;Pong, W. F.;Ting, L. C.;錢凡之;Chien, F. Z.
    贡献者: 淡江大學物理學系
    关键词: Ion beam mixing;XANES;Multilayers;Silicon carbide
    日期: 2002-06
    上传时间: 2009-11-04 17:17:13 (UTC+8)
    出版者: Amsterdam:Elsevier BV
    摘要: The C/Si multilayers were prepared by electron beam evaporation in a cryo-pumped vacuum deposition system. These were characterized by X-ray diffraction before and after high-energy heavy ion, 120 MeV Au, irradiation. Soft Xray absorption spectra in the C K-edge region were measured using synchrotron radiation to identify the chemical bonding states of the Si and C. This study indicates that ion beam mixing induces SiC phase and carbon clusters. A significant increase in the intensity of pre-edge peak of C K-edge, assigned to p , is observed in the irradiated C/Si multilayer sample. It is intriguing to note such sharp increase in intensity after irradiation that may be associated with the effect of large electronic excitation energy transferred by energetic Au ions.
    關聯: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 193(1-4), pp.324-328
    DOI: 10.1016/S0168-583X(02)00799-1
    显示于类别:[物理學系暨研究所] 期刊論文

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