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    题名: Electronic and atomic structures of Si–C–N thin film by X-ray-absorption spectroscopy
    作者: Pong, W. F.;Chang, Y. K.;Hsieh, H. H.;Tsai, M. H.;Lee, K. H.;Dann, T. E.;Chien, F. Z.;Tseng, P. K.;Tsang, K. L.;Su, W. K.;Chen, L. C.;Wei, S. L.;Chen, K. H.;Bhusari, D. M.;Chen, Y. F.
    贡献者: 淡江大學物理學系
    关键词: X-ray absorption near-edge structure;XANES;Extended X-ray absorption fine structure;EXAFS;Thin film;Core exciton;Hybridized states;First-principles calculations
    日期: 1998-05
    上传时间: 2009-11-04 17:16:42 (UTC+8)
    出版者: Amsterdam: Elsevier BV
    摘要: This study measures X-ray absorption spectra of crystalline (c)-Si–C–N thin film at the C and Si K-edge using the sample drain current mode, and at the N K-edge using the fluorescent mode. A resonance peak resembling the C 1s core exciton in CVD-diamond/Si is observed, and a broad feature occurring in the energy range between 290 and 300 eV can be assigned to the antibonding C 2p–Si 3sp hybridized states and the C 2p–N 2sp hybridized states as well. Analysis of the N K-edge near edge absorption spectra reveals a similar feature in c-Si–C–N and a-Si3N4, suggesting that nitrogen atoms generally have similar local environment in these two materials. Moreover, results obtained from Si K-edge absorption spectra for c-Si–C–N demonstrate a proportional combination of local Si–N and Si–C bonds, associated with the local tetrahedral C–Si–N3 as well as the long-range ordered atomic structure around Si atoms.
    關聯: Journal of electron spectroscopy and related phenomena 92(1-3), pp.115-118
    DOI: 10.1016/S0368-2048(98)00111-X
    显示于类别:[物理學系暨研究所] 期刊論文

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