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    請使用永久網址來引用或連結此文件: https://tkuir.lib.tku.edu.tw/dspace/handle/987654321/128456


    題名: Development of Vacuum-Chamber-Type Capacitive Micro-Pressure Sensors
    作者: Yang, Lung-Jieh;Jiang, De-Yu;Wang, Wei-Chen;Tasupalli, Chandrashekhar;Shih, Horng-Yuan;Wang, Yi-Jen
    關鍵詞: capacitive pressure sensor;complementary metal oxide semiconductor (CMOS);vacuum chamber
    日期: 2025-11-18
    上傳時間: 2026-02-27 12:05:14 (UTC+8)
    出版者: MDPI
    摘要: This study presents the development of a capacitive pressure sensor tailored for measuring the dynamic pressure of flow fields. The sensor is fabricated using the UMC 0.18 μm CMOS-MEMS process, incorporated with additional post-processing steps such as metal wet etching, supercritical CO2 drying, and parylene encapsulation. The sensing architecture employs AD7746 as a capacitance-to-voltage converter (CVC), enabling the conversion of capacitance signals into voltage outputs for enhanced measurement fidelity. Structurally, the capacitive pressure sensor features a vacuum-sealed diaphragm capsule design with dual movable circular membranes functioning as sensing electrodes. A contact-mode capacitive configuration with a trapezoidal or Gong-like vacuum-chamber diaphragm is adopted to improve linearity and sensitivity. The output sensitivity was determined to be feasible for measuring dynamic pressure at 1–2 Pa resolution.
    關聯: Micromachines 16(11), p.1290
    DOI: 10.3390/mi16111290
    顯示於類別:[電機工程學系暨研究所] 期刊論文

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