Analyses of the Properties of the NiO-Doped Ga2O3 Wide-Bandgap Semiconductor Thin Film

doi:10.3390/coatings14121615

淡江大學機構典藏 > 工學院 > 電機工程學系暨研究所 > 期刊論文 > Item 987654321/127514

Please use this identifier to cite or link to this item: https://tkuir.lib.tku.edu.tw/dspace/handle/987654321/127514

Title:	Analyses of the Properties of the NiO-Doped Ga2O3 Wide-Bandgap Semiconductor Thin Film
Authors:	Yang, Cheng-Fu;Tsao, En-Chi;Wang, Yi-Wen;Lin, Hsin-Pei;Meen, Teen-Hang;Liao, Shu-Han
Keywords:	NiO-doped Ga2O3;wide-bandgap semiconductor;UV-Vis spectroscopy;electrical conductivity;X-ray photoelectron spectroscopy
Date:	2024-12-23
Issue Date:	2025-07-21 12:05:44 (UTC+8)
Publisher:	MDPI
Abstract:	The study began by pre-sintering Ga2O3 powder at 950 °C for 1 h, followed by the preparation of a mixture of Ga2O3 and 12 at% NiO powders to fabricate a source target material. An electron beam (e-beam) system was then used to deposit NiO-doped Ga2O3 thin films on Si substrates. X-ray diffraction (XRD) analyses revealed that the pre-sintered Ga2O3 at 950 °C exhibited β-phase characteristics, and the deposited NiO-doped Ga2O3 thin films exhibited an amorphous phase. After the deposition of the NiO-doped Ga2O3 thin films, they were divided into two portions. One portion underwent various analyses directly, while the other was annealed at 500 °C in air before being analyzed. Field-emission scanning electron microscopy (FESEM) was utilized to process the surface observation, and the cross-sectional observation was primarily used to measure the thickness of the NiO-doped Ga2O3 thin films. UV-Vis spectroscopy was used to calculate the bandgap by analyzing the transmission spectra, while the Agilent B1500A was employed to measure the I-V characteristics. Hall measurements were also performed to assess the mobility, carrier concentration, and resistivity of both NiO-doped Ga2O3 thin films. The first innovation is that the 500 °C-annealed NiO-doped Ga2O3 thin films exhibited a larger bandgap and better electrical conductivity. The manuscript provides an explanation for the observed increase in the bandgap. Another important innovation is that the 500 °C-annealed NiO-doped Ga2O3 thin films revealed a high-energy bandgap of 4.402 eV. The third innovation is that X-ray photoelectron spectroscopy (XPS) analyses of the Ga2p3/2, Ga2p1/2, Ga3d, Ni2p3/2, and O1s peaks were conducted to further investigate the reasons behind the enhanced electrical conductivity of the 500 °C-annealed NiO-doped Ga2O3 thin films.
Relation:	Coatings 14(12), 1615
DOI:	10.3390/coatings14121615
Appears in Collections:	[電機工程學系暨研究所] 期刊論文

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