Physical properties and electronic structure of the two-gap superconductor V2Ga5

淡江大學機構典藏 > 理學院 > 物理學系暨研究所 > 期刊論文 > Item 987654321/126145

jsp.display-item.identifier=請使用永久網址來引用或連結此文件: https://tkuir.lib.tku.edu.tw/dspace/handle/987654321/126145

题名:	Physical properties and electronic structure of the two-gap superconductor V2Ga5
作者:	Lee, Chi-cheng
日期:	2024-09-04
上传时间:	2024-09-05 12:05:15 (UTC+8)
摘要:	We present a thorough investigation of the physical properties and superconductivity of the binary intermetallic V2Ga5. Electrical resistivity and specific heat measurements show that V2Ga5 enters its superconducting state below Tsc = 3.5 K, with a critical field of Hc2,perp c(Hc2,para c) = 6.5(4.1) kOe. With H perp c, the peak effect was observed in resistivity measurements, indicating the ultrahigh quality of the single crystal studied. The resistivity measurements under high pressure reveal that the Tsc is suppressed linearly with pressure and reaches absolute zero around 20 GPa. Specific heat and muon spin relaxation measurements both indicate that the two-gap s-wave model best describes the superconductivity of V2Ga5. The spectra obtained from angle-resolved photoemission spectroscopy measurements suggest that two superconducting gaps open at the Fermi surface around the Z and {\Gamma} points. These results are verified by first-principles band structure calculations. We therefore conclude that V2Ga5 is a phonon-mediated two-gap s-wave superconductor
關聯:	Physical Review Research 6,　033253
DOI:	10.48550/arXiv.2405.03499
显示于类别:	[物理學系暨研究所] 期刊論文

文件中的档案:

档案	描述	大小	格式	浏览次数
index.html		0Kb	HTML	101	检视/开启

在機構典藏中所有的数据项都受到原著作权保护.

TAIR相关文章