English  |  正體中文  |  简体中文  |  全文筆數/總筆數 : 64201/96996 (66%)
造訪人次 : 8004671      線上人數 : 2287
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library & TKU Library IR team.
搜尋範圍 查詢小技巧:
  • 您可在西文檢索詞彙前後加上"雙引號",以獲取較精準的檢索結果
  • 若欲以作者姓名搜尋,建議至進階搜尋限定作者欄位,可獲得較完整資料
  • 進階搜尋
    請使用永久網址來引用或連結此文件: https://tkuir.lib.tku.edu.tw/dspace/handle/987654321/125730


    題名: Localized geometry determined selectivity of iodide-derived copper for electrochemical CO2 reduction
    作者: Yuchuan Shi, Yiqing Wang, Chung-Li Dong, Ta Thi Thuy Nga, Daixing Wei, Jialin Wang, Xiaoli Zhao, Miao Wang, Kaini Zhang, Mingtao Li, Fan Dong, Shaohua Shen
    日期: 2023-01-29
    上傳時間: 2024-07-31 12:10:49 (UTC+8)
    出版者: Wiley-VCH
    摘要: Two iodide-derived copper (ID-Cu) electrocatalysts (E-ID-Cu and W-ID-Cu) are prepared by electrochemical/wet chemical iodination of Cu foil and subsequent in situ electrochemical reduction reaction. In comparison to electropolished Cu (EP-Cu), both E-ID-Cu and W-ID-Cu can produce multicarbon (C2+) products with much-improved selectivity, with Faradic efficiency (FE) reaching 64.39% for E-ID-Cu and 71.16% for W-ID-Cu at −1.1 V versus reversible hydrogen electrodes (RHE), which can be attributed to their localized geometry features with high defect density and high surface roughness. Given the well-determined FEs towards C2+ products, the partial current densities for C2+ production can be estimated to be 251.8 mA cm−2 for E-ID-Cu and 290.0 mA cm−2 for W-ID-Cu at −1.2 V versus RHE in a flow cell. In situ characterizations and theoretical calculations reveal that the high-density defects and high surface roughness can promote *CO adsorption by raising the d band center and then facilitate C–C coupling, contributing to the high selectivity of C2+ products for ID-Cu. Interestingly, the high surface roughness can increase the residence time of *C–H intermediates and decrease the formation energy of the *OCCO and*CH3CH2O intermediates, thus favoring C2+ production, with a unique C2H6 product observed over W-ID-Cu with FE of 10.14% at −0.7 V versus RHE.
    關聯: Advanced Energy Materials 13(11), 2203896
    DOI: 10.1002/aenm.202203896
    顯示於類別:[電機工程學系暨研究所] 期刊論文

    文件中的檔案:

    檔案 描述 大小格式瀏覽次數
    index.html0KbHTML45檢視/開啟

    在機構典藏中所有的資料項目都受到原著作權保護.

    TAIR相關文章

    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library & TKU Library IR teams. Copyright ©   - 回饋