Synergy of ultrathin CoOx overlayer and nickel single atoms on hematite nanorods for efficient photoelectrochemical water splitting

doi:10.1002/smll.202203838

機構典藏 > College of Engineering > Graduate Institute & Department of Electrical Engineering > Journal Article > Item 987654321/125729

Please use this identifier to cite or link to this item: https://tkuir.lib.tku.edu.tw/dspace/handle/987654321/125729

Title:	Synergy of ultrathin CoOx overlayer and nickel single atoms on hematite nanorods for efficient photoelectrochemical water splitting
Authors:	Lianlian Mao, Yu-Cheng Huang, Hao Deng, Fanqi Meng, Yanming Fu, Yiqing Wang, Mingtao Li, Qinghua Zhang, Chung-Li Dong, Lin Gu, Shaohua Shen
Date:	2023-02-15
Issue Date:	2024-07-31 12:10:47 (UTC+8)
Publisher:	Wiley-VCH
Abstract:	To solve surface carrier recombination and sluggish water oxidation kinetics of hematite (α-Fe2O3) photoanodes, herein, an attractive surface modification strategy is developed to successively deposit ultrathin CoOx overlayer and Ni single atoms on titanium (Ti)-doped α-Fe2O3 (Ti:Fe2O3) nanorods through a two-step atomic layer deposition (ALD) and photodeposition process. The collaborative decoration of ultrathin CoOx overlayer and Ni single atoms can trigger a big boost in photo-electrochemical (PEC) performance for water splitting over the obtained Ti:Fe2O3/CoOx/Ni photoanode, with the photocurrent density reaching 1.05 mA cm−2 at 1.23 V vs. reversible hydrogen electrode (RHE), more than three times that of Ti:Fe2O3 (0.326 mA cm−2). Electrochemical and electronic investigations reveal that the surface passivation effect of ultrathin CoOx overlayer can reduce surface carrier recombination, while the catalysis effect of Ni single atoms can accelerate water oxidation kinetics. Moreover, theoretical calculations evidence that the synergy of ultrathin CoOx overlayer and Ni single atoms can lower the adsorption free energy of OH* intermediates and relieve the potential-determining step (PDS) for oxygen evolution reaction (OER). This work provides an exemplary modification through rational engineering of surface electrochemical and electronic properties for the improved PEC performances, which can be applied in other metal oxide semiconductors as well.
Relation:	Small 19(7), 2203838
DOI:	10.1002/smll.202203838
Appears in Collections:	[Graduate Institute & Department of Electrical Engineering] Journal Article

Files in This Item:

File	Description	Size	Format
index.html		0Kb	HTML	40	View/Open

Loading...