Electrochemical etching induced high-valence cobalt with defects site for boosting electrochemical water splitting

doi:10.1016/j.cej.2023.142224

淡江大學機構典藏 > 工學院 > 電機工程學系暨研究所 > 期刊論文 > Item 987654321/125727

請使用永久網址來引用或連結此文件: https://tkuir.lib.tku.edu.tw/dspace/handle/987654321/125727

題名:	Electrochemical etching induced high-valence cobalt with defects site for boosting electrochemical water splitting
作者:	Gao, Hongmei;Liu, Jiaqi;Zhang, Zijin;Lu, Yuxuan;Chen, Ru;Huang, Yu-Cheng;Xie, Chao;Qiu, Mengyi;Wu, Tianyu;Wang, Jinbo;Jiang, Yubin;Dong, Chung-Li;Kong, Zhijie;Wang, Shuangyin
關鍵詞:	High-valence active sitesCo-defect structureIntrinsic activityHigh durabilityOxygen evolution reaction
日期:	2023-05
上傳時間:	2024-07-31 12:10:41 (UTC+8)
出版者:	Elsevier
摘要:	The active origin of the high-valence-state enhance the oxygen evolution reaction performance, which still lacks confident evidence, especially on how to delay the loss of activity by retaining the valence dynamically stable. Herein, to demonstrate the role of pure electrochemistry on the evolution process is first detailed explored. The electrochemical operation is found benignly for building the high-valence cobalt (Co) on the surface and enhancing the degree of the weakened-crystalline structure due to the selenium (Se) leaching. The anodized CoSe2 (A-CoSe2) with the above structures was mainly linked to high intrinsic activity (η = 254 mV@10 mA cm−2) and durability (120 h), as well as a high-current (0.5 A cm−2, 30 h), withstand performance in anion exchange membrane (AEM) water electrolyzer among best Co-based catalysts. The high durability unravels the increasingly weakly crystalline structure was benign for the dynamical retainment of the metallic Co-defect structure and high-valence active sites.
關聯:	Chemical Engineering Journal 463, 142224
DOI:	10.1016/j.cej.2023.142224
顯示於類別:	[電機工程學系暨研究所] 期刊論文

文件中的檔案:

檔案	描述	大小	格式	瀏覽次數
index.html		0Kb	HTML	42	檢視/開啟

在機構典藏中所有的資料項目都受到原著作權保護.

TAIR相關文章

資料載入中.....