Electrochemical etching induced high-valence cobalt with defects site for boosting electrochemical water splitting

doi:10.1016/j.cej.2023.142224

淡江大學機構典藏 > 工學院 > 電機工程學系暨研究所 > 期刊論文 > Item 987654321/125727

Please use this identifier to cite or link to this item: https://tkuir.lib.tku.edu.tw/dspace/handle/987654321/125727

Title:	Electrochemical etching induced high-valence cobalt with defects site for boosting electrochemical water splitting
Authors:	Gao, Hongmei;Liu, Jiaqi;Zhang, Zijin;Lu, Yuxuan;Chen, Ru;Huang, Yu-Cheng;Xie, Chao;Qiu, Mengyi;Wu, Tianyu;Wang, Jinbo;Jiang, Yubin;Dong, Chung-Li;Kong, Zhijie;Wang, Shuangyin
Keywords:	High-valence active sitesCo-defect structureIntrinsic activityHigh durabilityOxygen evolution reaction
Date:	2023-05
Issue Date:	2024-07-31 12:10:41 (UTC+8)
Publisher:	Elsevier
Abstract:	The active origin of the high-valence-state enhance the oxygen evolution reaction performance, which still lacks confident evidence, especially on how to delay the loss of activity by retaining the valence dynamically stable. Herein, to demonstrate the role of pure electrochemistry on the evolution process is first detailed explored. The electrochemical operation is found benignly for building the high-valence cobalt (Co) on the surface and enhancing the degree of the weakened-crystalline structure due to the selenium (Se) leaching. The anodized CoSe2 (A-CoSe2) with the above structures was mainly linked to high intrinsic activity (η = 254 mV@10 mA cm−2) and durability (120 h), as well as a high-current (0.5 A cm−2, 30 h), withstand performance in anion exchange membrane (AEM) water electrolyzer among best Co-based catalysts. The high durability unravels the increasingly weakly crystalline structure was benign for the dynamical retainment of the metallic Co-defect structure and high-valence active sites.
Relation:	Chemical Engineering Journal 463, 142224
DOI:	10.1016/j.cej.2023.142224
Appears in Collections:	[電機工程學系暨研究所] 期刊論文

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