Origin of the memory effect in electrochromic sputtered WO3 films: composition, structure, or morphology?

doi:10.1002/admi.202300549

淡江大學機構典藏 > 工學院 > 電機工程學系暨研究所 > 期刊論文 > Item 987654321/125580

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题名:	Origin of the memory effect in electrochromic sputtered WO3 films: composition, structure, or morphology?
作者:	Brandon Faceira, Lionel Teulé-Gay, Jade Le Hébel, Christine Labrugère-Sarroste, Fabienne Ibalot, Hou-Yi Huang, Yu-Cheng Huang, Chung-Li Dong, Jean-Paul Salvetat, Mario Maglione, Aline Rougier
日期:	2023-08-03
上传时间:	2024-07-30 12:05:53 (UTC+8)
出版者:	Wiley-VCH
摘要:	The memory effect property, described as a reversible color persistence while the potential is withdrawn, is of particular importance to reaching zero-energy consumption electrochromic devices. Nevertheless, often observed in organic materials, it is poorly studied in oxides. In this study, electrochromic tungsten oxide thin films are elaborated at different working pressures by radiofrequency magnetron sputtering. The influence of the deposition pressure on the electrochemical properties of WO3 films as well as on their memory effect is investigated. Three kinds of WO3 films can be distinguished: with irreversible blue coloration, with reversible coloration presenting a high memory effect, and with reversible coloration with a low memory effect. The origin of these discrepancies is studied through the composition, the local atomic environment, and the morphology of the WO3 thin films. An increase of transmittance at 550 nm as low as 15.8% in 48 h in air and 5.2% in 24 h in the electrolyte is recorded. This study highlights a better understanding of the memory effect property of electrochromic oxides for low-consumption energy electrochromic devices, pointing out morphology as a key parameter.
關聯:	Advanced Materials Interfaces 10(33), 2300549
DOI:	10.1002/admi.202300549
显示于类别:	[電機工程學系暨研究所] 期刊論文

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