Study on the growth mechanisms of Cu‑In compounds at the Sn52In/Cu interface

淡江大學機構典藏 > 工學院 > 化學工程與材料工程學系暨研究所 > 期刊論文 > Item 987654321/124637

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題名:	Study on the growth mechanisms of Cu‑In compounds at the Sn52In/Cu interface
作者:	Wang, Yi‑wun
日期:	2023-10-12
上傳時間:	2023-10-16 12:05:28 (UTC+8)
出版者:	Springer
摘要:	Climate change and global temperature increases both impact the environment, as seen through rising sea levels and the food crises. Emissions of carbon dioxide should be reduced to values as close to zero as possible by 2050. Manufacturers require large amounts of energy to produce electronic products. Flexible devices are some of the most popular electronic products. Advanced materials in the field of flexible devices are highly convenient. Electric and thermal conductivity are important properties for electronic devices. Low-temperature Sn52In is used in this study to effectively decrease the bonding temperature. The aim of this study is to investigate the reaction of eutectic Sn52In solder with Cu for low-temperature bonding and aging reactions. In addition, the storage time of In-based solder is extremely important because of the rapid reactions of Cu and In to form CuIn2 at room temperature. CuIn2 formation after room temperature storage possibly causes useless bonding. Failure joints occur due to In (solder) shortage time.
關聯:	Journal of Materials Science: Materials in Electronics 34,　1983
DOI:	10.1007/s10854-023-11347-0
顯示於類別:	[化學工程與材料工程學系暨研究所] 期刊論文

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