Partial Segregation of Bi and Microvoid Formation on a Pure Cu Substrate After Solid–Solid Reactions

機構典藏 > College of Engineering > Graduate Institute & Department of Chemical and Materials Engineering > Journal Article > Item 987654321/124261

Please use this identifier to cite or link to this item: https://tkuir.lib.tku.edu.tw/dspace/handle/987654321/124261

Title:	Partial Segregation of Bi and Microvoid Formation on a Pure Cu Substrate After Solid–Solid Reactions
Authors:	Wang, Yi‑wun
Keywords:	Carbon reduction;semiconductor;Sn58Bi;partial Bi segregation
Date:	2023-04-07
Issue Date:	2023-07-19 12:05:58 (UTC+8)
Abstract:	With the trend of technology development and carbon reduction, reducing the process temperature to prevent greenhouse effects is of great urgency. The back-end process of semiconductors is increasingly important because of the limitation of Moore’s Law. High-temperature bonding is serious for semiconductor packages, which induces high cost and device damage. One of the critical ways to reduce the process temperature is to adopt low-temperature solders. In this study, we utilize the low-temperature solder Sn58Bi to achieve energy savings and device protection. The interfacial reactions between Sn58Bi and Cu after reflow and aging reactions were investigated. The solubility of Bi in Sn influences the Bi segregation at the interface. Partial Bi segregation, microvoids, and uneven Cu3Sn were observed at the interface after aging. There is no doubt that the aforementioned structures are unfavorable for solder joint strength
Relation:	Journal of Electronic Materials 52,　p.4000–4010
DOI:	10.1007/s11664-023-10390-1
Appears in Collections:	[Graduate Institute & Department of Chemical and Materials Engineering] Journal Article

Files in This Item:

File	Description	Size	Format
index.html		0Kb	HTML	117	View/Open