淡江大學機構典藏:Item 987654321/124106
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    Please use this identifier to cite or link to this item: https://tkuir.lib.tku.edu.tw/dspace/handle/987654321/124106


    Title: Single-metal atoms and ultra-small clusters manipulating charge carrier migration in polymeric perylene diimide for efficient photocatalytic oxygen production
    Authors: Dong, Chung-li
    Keywords: photocatalytic oxygen evolution;polymeric perylene diimide;single metal atoms;ultra-small clusters
    Date: 2022-06
    Issue Date: 2023-05-15 12:10:38 (UTC+8)
    Abstract: Limited by the retarded charge carrier migration and the sluggish four-electron reaction kinetics, it is still a great challenge for polymeric semiconductors to achieve efficient photocatalytic water oxidation. Herein, single Co atoms and ultra-small CoOx clusters are simultaneously introduced into polymeric perylene diimide (PDI) through a facile impregnation-calcination two-step method. The obtained Co-PDI exhibits excellent photocatalytic water oxidation activity under visible-light irradiation, with an oxygen evolution rate reaching as high as 5.53 mmol h–1 g–1 (λ > 420 nm). The apparent quantum yield for oxygen evolution is determined to be 8.17% at 450 nm, and remains 0.77% at even longer visible light wavelength of 700 nm without redundant co-catalysts, indicating that Co-PDI may serve as an excellent oxygen evolution photocatalyst for water splitting. Theoretical calculations and experimental results demonstrate that single Co atoms act as the electron mediators connecting adjacent PDI layers to build directional channels for rapid charge transfer, while ultra-small CoOx clusters as hole collectors and reaction sites to accelerate oxygen evolution reaction kinetics. The study presents a facile and reliable strategy to effectively activate polymeric semiconductors for efficient photocatalysis by rationally modulating atomic structures and active sites for promoted charge carrier transfer and surface reaction kinetics.
    Relation: Advanced Energy Materials 12(26), 2200716
    DOI: 10.1002/aenm.202200716
    Appears in Collections:[Graduate Institute & Department of Electrical Engineering] Journal Article

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