淡江大學機構典藏:Item 987654321/124089
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    题名: Structural, opto-electrical, and band-edge properties of full-series multilayer SnS1-xSex (0x1) compounds with strong in-plane anisotropy
    作者: Hsueh, Hung-chung
    关键词: Phosphorene structure；Tin monochalcogenides；In-plane anisotropy；Polarized Raman spectroscopy；Band-edge structure
    日期: 2023-05-10
    上传时间: 2023-05-15 12:05:31 (UTC+8)
    出版者: Elsevier
    摘要: Two-dimensional (2D) semiconductors with black phosphorus (BP) structure have recently received
    considerable attention on the realization of polarized optoelectronic device, axial-dependent carrier
    transport, and asymmetric 2D electronic and energy device owing to the strong in-plane anisotropy
    presented in the van der Waal plane. In this work, multilayered SnS1-xSex chalcogenides of x ¼ 0, 0.2, 0.4, 0.5, 0.6, 0.8 and x ¼ 1 were grown by chemical vapor transport and then exfoliated on a SiO2/Si substrate for further optical characterization. Polarized micro-Raman experiment and theoretical Raman-mode calculation simultaneously demonstrate strong in-plane anisotropy with the maximum Raman intensity of the armchair (AM) chain vibration mode (Ag) shows mutual orthogonality to the zigzag (ZZ)
    chain-oriented mode (B1g) in the full-series multilayer SnS1-xSex (0 x 1). For the intermediate
    compositions between x ¼ 0.2 and x ¼ 0.8, a crucial physical mechanism as “symmetry breaking” has
    been proposed to account for the increased number of separated Ag and B1g modes with different energies as compared to those detected for the binary compounds of orthorhombic SnS and SnSe. For the band-edge anisotropy, the bandgap value of ZZ polarized direction is shown to be lower than that of the AM direction for each of the SnS1-xSex compounds evidenced by polarized-thermoreflectance experiments and first-principles calculations.
    關聯: Materials Today Advances 18
    DOI: 10.1016/j.mtadv.2023.100379
    显示于类别:[物理學系暨研究所] 期刊論文

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