Vacuum deposited WO3/Al/Al:Ag anode for efficient red organic light-emitting diodes

doi:10.1016/j.orgel.2022.106454

淡江大學機構典藏 > 理學院 > 化學學系暨研究所 > 期刊論文 > Item 987654321/123399

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题名:	Vacuum deposited WO3/Al/Al:Ag anode for efficient red organic light-emitting diodes
作者:	Sutanto, K.;Amin, N. R. A.;Chen, C.-H.;Luo, D.;Biring, S.;Lee, C.-C.;Liu, S.-W.*
关键词:	Organic light emitting diode;Alloy electrode;Multilayered electrode;Phosphorescent;Exciplex co-host
日期:	2022-02-17
上传时间:	2023-04-28 17:58:19 (UTC+8)
出版者:	Elsevier
摘要:	Vacuum deposited multilayered electrode with ultra-smooth surface morphology and suitable work function for efficient electron or hole injection at the interface between the organic and metal layers is attracting more attentions recently. Following the trend, a simplified structure of WO3/Al/Al:Ag anode with the sheet resistance of 1.93 Ω/sq, work function of ∼5.11 eV, and surface roughness of 0.72 nm was fabricated to develop a red organic light-emitting diode (OLED) with the external quantum efficiency (EQE) of ∼16.18% at 1000 cd m−2, which is much higher than that of an red OLED based on standard ITO electrode (EQE ∼ 12.32%). In addition, the red OLED with our proposed ITO-free anode exhibit a bright emission with luminance of >10,000 cd m−2 at 5 V as well as could be fabricated on a large active area of 4 cm2 without any breakdown issue. This is attributed to the ultra-smooth multilayer with a suitable workfunction reducing the contact barrier energy in the interface of organic and metal layer. Impedance spectroscopy, transient electroluminescence, and optical simulation were carried out to understand the device physics and carrier recombination behaviors.
關聯:	Organic Electronics 103, 106454
DOI:	10.1016/j.orgel.2022.106454
显示于类别:	[化學學系暨研究所] 期刊論文

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