Atomically thin metallic Si and Ge allotropes with high Fermi velocities

淡江大學機構典藏 > 理學院 > 物理學系暨研究所 > 期刊論文 > Item 987654321/123367

Please use this identifier to cite or link to this item: https://tkuir.lib.tku.edu.tw/dspace/handle/987654321/123367

Title:	Atomically thin metallic Si and Ge allotropes with high Fermi velocities
Authors:	Hsu, Chin-En;Lee, Yung-Ting;Wang, Chieh-Chun;Lin, Chang-Yu;Yukiko, Yamada-Takamura;Ozaki, Taisuke;Lee, Chi-Cheng
Date:	2023-03-09
Issue Date:	2023-04-28 17:46:51 (UTC+8)
Publisher:	American Physical Society
Abstract:	Silicon and germanium are well-known materials used to manufacture electronic devices for integrated circuits, but they themselves are not considered as promising options for interconnecting the devices due to their semiconducting nature. We have discovered that both Si and Ge atoms can form unexpected metallic monolayer structures with a square lattice which are more stable than the semimetallic silicene and germanene, respectively, in line with the energetically more favored dumbbell and wavy-bilayer structures. More importantly, these two-dimensional allotropes of Si and Ge host Dirac fermions with Fermi velocities superior to those in graphene, indicating that the metal wires needed in the silicon-based integrated circuits can be made of the Si atom itself without incompatibility, allowing for all-silicon-based integrated circuits.
Relation:	Phys. Rev. B 107, 115410
DOI:	10.1103/PhysRevB.107.115410
Appears in Collections:	[物理學系暨研究所] 期刊論文

Files in This Item:

File	Description	Size	Format
index.html		0Kb	HTML	144	View/Open