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    Please use this identifier to cite or link to this item: https://tkuir.lib.tku.edu.tw/dspace/handle/987654321/123351

    Title: Low-Frequency 1/f Noise Characteristics of Ultra-Thin AlOx-Based Resistive Switching Memory Devices with Magneto-Resistive Responses
    Authors: Hong, Jhen-Yong;Chen, Chun-Yen;Ling, Dah-Chin;Martínez, Isidoro;César, González-Ruano;Aliev, Farkhad G.
    Keywords: low-frequency 1/f noise;resistive switching;magnetic tunnel junction (MTJ);magneto-resistance (MR);Hooge’s parameter
    Date: 2021-10-16
    Issue Date: 2023-04-28 17:46:34 (UTC+8)
    Publisher: Electronic Press
    Abstract: Low-frequency 1/f voltage noise has been employed to probe stochastic charge dynamics in AlOx-based non-volatile resistive memory devices exhibiting both resistive switching (RS) and magneto-resistive (MR) effects. A 1/fγ noise power spectral density is observed in a wide range of applied voltage biases. By analyzing the experimental data within the framework of Hooge’s empirical relation, we found that the Hooge’s parameter α and the exponent γ exhibit a distinct variation upon the resistance transition from the low resistance state (LRS) to the high resistance state (HRS), providing strong evidence that the electron trapping/de-trapping process, along with the electric field-driven oxygen vacancy migration in the AlOx barrier, plays an essential role in the charge transport dynamics of AlOx-based RS memory devices.
    Relation: Electronics 10(20), 2525
    DOI: 10.3390/electronics10202525
    Appears in Collections:[Graduate Institute & Department of Physics] Journal Article

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