Low-Frequency 1/f Noise Characteristics of Ultra-Thin AlOx-Based Resistive Switching Memory Devices with Magneto-Resistive Responses

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Title:	Low-Frequency 1/f Noise Characteristics of Ultra-Thin AlOx-Based Resistive Switching Memory Devices with Magneto-Resistive Responses
Authors:	Jhen-Yong Hong;Chun-Yen Chen;Dah-Chin Ling;Isidoro Martínez;César González-Ruano;Farkhad G. Aliev
Keywords:	low-frequency 1/f noise;resistive switching;magnetic tunnel junction (MTJ);magnetoresistance (MR);Hooge’s parameter
Date:	2021-10-16
Issue Date:	2022-03-04 12:15:49 (UTC+8)
Publisher:	MDPI
Abstract:	Low-frequency 1/f voltage noise has been employed to probe stochastic charge dynamics in AlOx-based non-volatile resistive memory devices exhibiting both resistive switching (RS) and magneto-resistive (MR) effects. A 1/f noise power spectral density is observed in a wide range of applied voltage biases. By analyzing the experimental data within the framework of Hooge’s empirical relation, we found that the Hooge’s parameter and the exponent exhibit a distinct variation upon the resistance transition from the low resistance state (LRS) to the high resistance state (HRS), providing strong evidence that the electron trapping/de-trapping process, along with the electric field-driven oxygen vacancy migration in the AlOx barrier, plays an essential role in the charge transport dynamics of AlOx-based RS memory devices.
Relation:	Electronics 10(20), p.2525
DOI:	10.3390/electronics10202525
Appears in Collections:	[Graduate Institute & Department of Physics] Journal Article

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