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    jsp.display-item.identifier=請使用永久網址來引用或連結此文件: https://tkuir.lib.tku.edu.tw/dspace/handle/987654321/122377

    题名: Low-Frequency 1/f Noise Characteristics of Ultra-Thin AlOx-Based Resistive Switching Memory Devices with Magneto-Resistive Responses
    作者: Hong, Jhen-Yong;Chen, Chun-Yen;Ling, Dah-Chin;Martínez, Isidoro;César, González-Ruano;Aliev, Farkhad G.
    关键词: low-frequency 1/f noise;resistive switching;magnetic tunnel junction (MTJ);magnetoresistance (MR);Hooge’s parameter
    日期: 2021-10-16
    上传时间: 2022-03-04 12:15:49 (UTC+8)
    出版者: MDPI
    摘要: Low-frequency 1/f voltage noise has been employed to probe stochastic charge dynamics
    in AlOx-based non-volatile resistive memory devices exhibiting both resistive switching (RS) and
    magneto-resistive (MR) effects. A 1/f
    noise power spectral density is observed in a wide range
    of applied voltage biases. By analyzing the experimental data within the framework of Hooge’s
    empirical relation, we found that the Hooge’s parameter and the exponent
    exhibit a distinct
    variation upon the resistance transition from the low resistance state (LRS) to the high resistance
    state (HRS), providing strong evidence that the electron trapping/de-trapping process, along with
    the electric field-driven oxygen vacancy migration in the AlOx barrier, plays an essential role in the
    charge transport dynamics of AlOx-based RS memory devices.
    關聯: Electronics 10(20), 2525
    DOI: 10.3390/electronics10202525
    显示于类别:[物理學系暨研究所] 期刊論文


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