Low-frequency 1/f voltage noise has been employed to probe stochastic charge dynamics
in AlOx-based non-volatile resistive memory devices exhibiting both resistive switching (RS) and
magneto-resistive (MR) effects. A 1/f
noise power spectral density is observed in a wide range
of applied voltage biases. By analyzing the experimental data within the framework of Hooge’s
empirical relation, we found that the Hooge’s parameter and the exponent
exhibit a distinct
variation upon the resistance transition from the low resistance state (LRS) to the high resistance
state (HRS), providing strong evidence that the electron trapping/de-trapping process, along with
the electric field-driven oxygen vacancy migration in the AlOx barrier, plays an essential role in the
charge transport dynamics of AlOx-based RS memory devices.
