English  |  正體中文  |  简体中文  |  全文筆數/總筆數 : 62572/95237 (66%)
造訪人次 : 2537756      線上人數 : 169
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library & TKU Library IR team.
搜尋範圍 查詢小技巧:
  • 您可在西文檢索詞彙前後加上"雙引號",以獲取較精準的檢索結果
  • 若欲以作者姓名搜尋,建議至進階搜尋限定作者欄位,可獲得較完整資料
  • 進階搜尋
    請使用永久網址來引用或連結此文件: https://tkuir.lib.tku.edu.tw/dspace/handle/987654321/122377

    題名: Low-Frequency 1/f Noise Characteristics of Ultra-Thin AlOx-Based Resistive Switching Memory Devices with Magneto-Resistive Responses
    作者: Hong, Jhen-Yong;Chen, Chun-Yen;Ling, Dah-Chin;Martínez, Isidoro;César, González-Ruano;Aliev, Farkhad G.
    關鍵詞: low-frequency 1/f noise;resistive switching;magnetic tunnel junction (MTJ);magnetoresistance (MR);Hooge’s parameter
    日期: 2021-10-16
    上傳時間: 2022-03-04 12:15:49 (UTC+8)
    出版者: MDPI
    摘要: Low-frequency 1/f voltage noise has been employed to probe stochastic charge dynamics
    in AlOx-based non-volatile resistive memory devices exhibiting both resistive switching (RS) and
    magneto-resistive (MR) effects. A 1/f
    noise power spectral density is observed in a wide range
    of applied voltage biases. By analyzing the experimental data within the framework of Hooge’s
    empirical relation, we found that the Hooge’s parameter and the exponent
    exhibit a distinct
    variation upon the resistance transition from the low resistance state (LRS) to the high resistance
    state (HRS), providing strong evidence that the electron trapping/de-trapping process, along with
    the electric field-driven oxygen vacancy migration in the AlOx barrier, plays an essential role in the
    charge transport dynamics of AlOx-based RS memory devices.
    關聯: Electronics 10(20), 2525
    DOI: 10.3390/electronics10202525
    顯示於類別:[物理學系暨研究所] 期刊論文


    檔案 描述 大小格式瀏覽次數



    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library & TKU Library IR teams. Copyright ©   - 回饋