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    請使用永久網址來引用或連結此文件: https://tkuir.lib.tku.edu.tw/dspace/handle/987654321/120866


    題名: Bilateral Photoresponse of a Graphene-Oxide-Semiconductor Heterostructure Diode
    作者: Lee, Ching-Ping;Cai, Ming-Ying;Wang, Jen-Yu;Ling, D.C.;Chen, Yung-Fu;Wu, Cen-Shawn;Chen, Jeng-Chung
    關鍵詞: Elemental semiconductors;Field-effect transistors;Graphene;Multilayer thin films;Optical sources & detectors;Photodiodes
    日期: 2021-05-28
    上傳時間: 2021-06-11 12:14:36 (UTC+8)
    出版者: APS
    摘要: We report on the photodetection properties of a graphene-oxide-semiconductor (GOS) diode by measuring its current-voltage characteristics under illumination with light-emitting diodes (LEDs). We demonstrate that a GOS structure, with graphene used as a transparent gate electrode to form an inversion layer at the oxide-semiconductor interface, can function as a GOS field-effect transistor operable at low temperatures down to 1.5 K. By investigating the gate tunneling current in a GOS diode with a transistor structure, we find that the dark current is below approximately 0.1 nA at
    T
    =
    150
    K, which is almost two orders of magnitude lower than that in a graphene-semiconductor (GS) Schottky-diode photodetector. Notably, the GOS diode shows a bilateral photoresponse in both forward- and reverse-bias regimes under LED illumination. The photocurrent responsivity
    R
    reaches approximately 100 mA/W at
    T
    =
    150
    K with a low bias voltage of approximately

    0.6
    V, which is one order of magnitude lower than that applied in a GS Schottky-diode photodetector. We propose that a GOS heterostructure can be made to behave as a
    p
    -
    i
    -
    n
    or an
    n
    -
    i
    -
    p
    diode by manipulating the polarity of the bias voltage applied to the graphene gate. In addition, we quantitatively simulate the key features of the dark current by taking into account the associated bipolar current in graphene along with band-to-trap tunneling and trap-assisted tunneling processes. Our theoretical model sheds light on the mechanism of the bilateral photoresponse of the GOS photodetector. Our work paves the way to engineering hybrid
    關聯: PHYSICAL REVIEW APPLIED 15, 054067
    DOI: 10.1103/PhysRevApplied.15.054067
    顯示於類別:[物理學系暨研究所] 期刊論文

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