淡江大學機構典藏:Item 987654321/120500
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    Please use this identifier to cite or link to this item: https://tkuir.lib.tku.edu.tw/dspace/handle/987654321/120500


    Title: Microstructure and electronic properties of ultra-nano-crystalline-diamond thin films
    Authors: R.W. Thoka;S.J. Moloi;Sekhar C. Ray;W. F. Pong;I.-N. Lin
    Keywords: UNCD;Raman spectroscopy;Hardness/Young’s modulus;XPS/UPS
    Date: 2020-07
    Issue Date: 2021-04-15 12:11:48 (UTC+8)
    Abstract: Ultra-nano-crystalline diamond (UNCD) thin films with average thickness ∼200 nm, were grown on n-type mirror polished silicon (100) substrates using microwave plasma enhanced chemical vapour deposition system in different gas (H2 - N2 - Ar - CH4) composition plasma atmospheres at 1200 W (2.45 GHz) and in a pressure of 120 Torr with plasma-temperature ∼475 °C. Raman spectroscopy was used for microstructural study and nano-indentation was used for Hardness/Young’s modulus study; whereas X-ray absorption near edge structure, X-ray photoelectron and ultraviolet photoemission spectroscopies were used for electronic structure of UNCD thin films. The hardness of the films is found to be ∼30 GPa, Young’s modulus ∼300 GPa and induced electron field emission, the turn on electric field, ETOE = 11 V/μm. All results show that the UNCD could be useful for different industrial semiconductor/optoelectronic devices and as flexible materials for thin film coating technology.
    Relation: Journal of Electron Spectroscopy and Related Phenomena 242, 146968
    DOI: 10.1016/j.elspec.2020.146968
    Appears in Collections:[Graduate Institute & Department of Physics] Journal Article

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