B*-Sort: Enabling Write-Once Sorting for Nonvolatile Memory

doi:10.1109/TCAD.2020.2979819

淡江大學機構典藏 > 工學院 > 電機工程學系暨研究所 > 期刊論文 > Item 987654321/120138

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題名:	B*-Sort: Enabling Write-Once Sorting for Nonvolatile Memory
作者:	Yu-Pei Liang;Tseng-Yi Chen;Yuan-Hao Chang;Shuo-Han Chen;Hsin-Wen Wei;Wei-Kuan Shih
關鍵詞:	Nonvolatile memory;read/write asymmetry;sorting algorithm
日期:	2020-12
上傳時間:	2021-03-11 12:10:38 (UTC+8)
摘要:	Nonvolatile random access memory (NVRAM) has been regarding a promising technology to replace DRAM as the main memory in embedded systems owing to its nonvolatility and low idle power consumption. However, due to the asymmetric read/write costs and limited lifetime of NVRAM, most of the existing fundamental algorithms are not NVRAM-friendly with their write pattern and write intensiveness. Thus, existing fundamental algorithms for NVRAM embedded devices has been revealed. For instance, as the sorting algorithm is one of the most fundamental algorithms, most of the existing sorting algorithms are not NVRAM-friendly because they impose heavy write traffic [i.e., O(n lgn)] on main memory, where n is the number of unsorted elements. To resolve this issue, this article proposes a write-once sorting algorithm, namely B-sort, to reduce the amount of write traffic on NVRAM-based main memory. Bsort adopts a brand-new concept, i.e., tree-based sort, inspired by the binary-search-tree structure to achieve the write-once property which can guarantee the optimal endurance during the sorting process. According to the experimental results, B*-sort can achieve significant performance improvement for sorting on NVRAM-based systems.
關聯:	IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 39(12), p.4549-4562
DOI:	10.1109/TCAD.2020.2979819
顯示於類別:	[電機工程學系暨研究所] 期刊論文

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