淡江大學機構典藏:Item 987654321/118827
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    題名: Applications of p-n Homojunction ZnO Nanowires to One-Diode One-Memristor RRAM Arrays
    作者: Jui-Yuan Chen;Min-Ci Wu;Yi-Hsin Ting;Wei-Che Lee;Ping-Hung Yeh;Wen-Wei Wu
    關鍵詞: nanowires;RRAM;diode;ZnO;homojunction
    日期: 2020-04-29
    上傳時間: 2020-07-01 12:11:19 (UTC+8)
    出版者: Elsevier Ltd
    摘要: Nanowire (NW) structure is superior at defining the direction
    of device due to its one-dimension feature. In this work, the p-n ZnO NWs
    were successfully synthesized, and were able to vertically grow on Ta2O5
    substrate. Thus, the well-performed Au/ p-n ZnO NWs/ Ta2O5/ Au one-diode
    one-memoristor device was fabricated. The p-n ZnO NWs not only exhibited
    excellent rectifying behavior, but also played the role of oxygen storing
    during filaments formation. Therefore, the low-leakage device aimed to
    build high-density crossbar arrays which was required for accelerating
    the combination of 5G with AI in near future applications.
    關聯: Scripta Materialia 187, p.439-444
    DOI: 10.2139/ssrn.3580436
    顯示於類別:[物理學系暨研究所] 期刊論文

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