Applications of p-n Homojunction ZnO Nanowires to One-Diode One-Memristor RRAM Arrays

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Title:	Applications of p-n Homojunction ZnO Nanowires to One-Diode One-Memristor RRAM Arrays
Authors:	Jui-Yuan Chen;Min-Ci Wu;Yi-Hsin Ting;Wei-Che Lee;Ping-Hung Yeh;Wen-Wei Wu
Keywords:	nanowires;RRAM;diode;ZnO;homojunction
Date:	2020-04-29
Issue Date:	2020-07-01 12:11:19 (UTC+8)
Publisher:	Elsevier Ltd
Abstract:	Nanowire (NW) structure is superior at defining the direction of device due to its one-dimension feature. In this work, the p-n ZnO NWs were successfully synthesized, and were able to vertically grow on Ta2O5 substrate. Thus, the well-performed Au/ p-n ZnO NWs/ Ta2O5/ Au one-diode one-memoristor device was fabricated. The p-n ZnO NWs not only exhibited excellent rectifying behavior, but also played the role of oxygen storing during filaments formation. Therefore, the low-leakage device aimed to build high-density crossbar arrays which was required for accelerating the combination of 5G with AI in near future applications.
Relation:	Scripta Materialia 187, p.439-444
DOI:	10.2139/ssrn.3580436
Appears in Collections:	[Graduate Institute & Department of Physics] Journal Article

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