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    Please use this identifier to cite or link to this item: http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/118827

    Title: Applications of p-n Homojunction ZnO Nanowires to One-Diode One-Memristor RRAM Arrays
    Authors: Jui-Yuan Chen, Min-Ci Wu, Yi-Hsin Ting, Wei-Che Lee, Ping-Hung Yeh, and Wen-Wei Wu
    Keywords: nanowires;RRAM;diode;ZnO;homojunction
    Date: 2020-04-29
    Issue Date: 2020-07-01 12:11:19 (UTC+8)
    Publisher: Elsevier Ltd
    Abstract: Nanowire (NW) structure is superior at defining the direction
    of device due to its one-dimension feature. In this work, the p-n ZnO NWs
    were successfully synthesized, and were able to vertically grow on Ta2O5
    substrate. Thus, the well-performed Au/ p-n ZnO NWs/ Ta2O5/ Au one-diode
    one-memoristor device was fabricated. The p-n ZnO NWs not only exhibited
    excellent rectifying behavior, but also played the role of oxygen storing
    during filaments formation. Therefore, the low-leakage device aimed to
    build high-density crossbar arrays which was required for accelerating
    the combination of 5G with AI in near future applications.
    Relation: Scripta Materialia
    DOI: 10.2139/ssrn.3580436
    Appears in Collections:[Graduate Institute & Department of Physics] Journal Article

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