Nanowire (NW) structure is superior at defining the direction
of device due to its one-dimension feature. In this work, the p-n ZnO NWs
were successfully synthesized, and were able to vertically grow on Ta2O5
substrate. Thus, the well-performed Au/ p-n ZnO NWs/ Ta2O5/ Au one-diode
one-memoristor device was fabricated. The p-n ZnO NWs not only exhibited
excellent rectifying behavior, but also played the role of oxygen storing
during filaments formation. Therefore, the low-leakage device aimed to
build high-density crossbar arrays which was required for accelerating
the combination of 5G with AI in near future applications.