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    jsp.display-item.identifier=請使用永久網址來引用或連結此文件: https://tkuir.lib.tku.edu.tw/dspace/handle/987654321/118826

    题名: Near-Infrared Laser-Annealed IZO Flexible Device as a Sensitive H2S Sensor at Room Temperature
    作者: Chang, Po-Yi;Lin, Ching-Fu;Rouphael, Samer El Khoury;Huang, Ting-Hsuan;Wu, Chang-Mao;Berling, Dominique;Yeh, Ping-Hung;Lu, Chia-Jung;Meng, Hsin-Fei;Zan, Hsiao-Wen;Soppera, Olivier
    关键词: gas sensor;IZO;sol−gel;laser annealing;NIR;flexible
    日期: 2020-05-05
    上传时间: 2020-07-01 12:11:09 (UTC+8)
    出版者: American Chemical Society
    摘要: A metal-oxide material (indium zinc oxide [IZO]) device with near-infrared (NIR) laser annealing was demonstrated on both glass and bendable plastic substrates (polycarbonate, polyethylene, and polyethylene terephthalate). After only 60 s, the sheet resistance of IZO films annealed with a laser was comparable to that of thermal-annealed devices at temperatures in the range of 200–300 °C (1 h). XPS, ATR, and AFM were used to investigate the changes in the sheet resistance and correlate them to the composition and morphology of the thin film. Finally, the NIR-laser-annealed IZO films were demonstrated to be capable of detecting changes in humidity and serving as a highly sensitive gas sensor of hydrogen sulfide (in ppb concentration), with room-temperature operation on a bendable substrate.
    關聯: ACS Applied Materials & Interfaces 12(22), p.24984−24991
    DOI: 10.1021/acsami.0c03257
    显示于类别:[物理學系暨研究所] 期刊論文


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