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    Please use this identifier to cite or link to this item: http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/118826

    Title: Near-Infrared Laser-Annealed IZO Flexible Device as a Sensitive H2S Sensor at Room Temperature
    Authors: Chang, Po-Yi;Lin, Ching-Fu;Rouphael, Samer El Khoury;Huang, Ting-Hsuan;Wu, Chang-Mao;Berling, Dominique;Yeh, Ping-Hung;Lu, Chia-Jung;Meng, Hsin-Fei;Zan, Hsiao-Wen;Soppera, Olivier
    Keywords: gas sensor;IZO;sol−gel;laser annealing;NIR;flexible
    Date: 2020-05-05
    Issue Date: 2020-07-01 12:11:09 (UTC+8)
    Publisher: American Chemical Society
    Abstract: A metal-oxide material (indium zinc oxide [IZO]) device with near-infrared (NIR) laser annealing was demonstrated on both glass and bendable plastic substrates (polycarbonate, polyethylene, and polyethylene terephthalate). After only 60 s, the sheet resistance of IZO films annealed with a laser was comparable to that of thermal-annealed devices at temperatures in the range of 200–300 °C (1 h). XPS, ATR, and AFM were used to investigate the changes in the sheet resistance and correlate them to the composition and morphology of the thin film. Finally, the NIR-laser-annealed IZO films were demonstrated to be capable of detecting changes in humidity and serving as a highly sensitive gas sensor of hydrogen sulfide (in ppb concentration), with room-temperature operation on a bendable substrate.
    Relation: ACS Applied Materials & Interfaces 12(22), p.24984−24991
    DOI: 10.1021/acsami.0c03257
    Appears in Collections:[Graduate Institute & Department of Physics] Journal Article

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