Study of Structural, Thermoelectric, and Photoelectric Properties of Layered Tin Monochalcogenides SnX (X = S, Se) for Energy Application

doi:10.1021/acsaem.0c00481

淡江大學機構典藏 > 理學院 > 物理學系暨研究所 > 期刊論文 > Item 987654321/118759

請使用永久網址來引用或連結此文件: https://tkuir.lib.tku.edu.tw/dspace/handle/987654321/118759

題名:	Study of Structural, Thermoelectric, and Photoelectric Properties of Layered Tin Monochalcogenides SnX (X = S, Se) for Energy Application
作者:	Ching-Hwa Ho;Wen-Yao Lin;Liang-Chiun Chao;Kuei-Yi Lee;Jun Inagaki;Hung-Chung Hsueh
關鍵詞:	2D semiconductor;thermoelectric material;solar-cell material;band structure;in-plane anisotropy
日期:	2020-04-14
上傳時間:	2020-06-04 12:10:13 (UTC+8)
出版者:	ACS publications
摘要:	SnS and SnSe are renowned energy materials that are applied for photoelectric and thermoelectric conversions owing to their suitable band gap, close to 1 eV, and superior figure of merit (ZT), larger than 0.1. In this paper, high-quality layered SnX (X = S, Se) crystals have been successfully grown by the chemical vapor transport (CVT) method. The crystal structure and band structure of SnX are studied, and their photoelectric and thermoelectric properties are characterized. In Raman measurement, four vibration modes with distinct angle-polarization dependence are simultaneously detected by both SnS and SnSe, verifying their similar orthorhombic layered structure with in-plane anisotropy. In-plane anisotropy of band-edge and interband transitions along a and b axes has also been measured experimentally using polarized thermoreflectance (PTR) from 0.7 to 5 eV. The anisotropic band edges of layered SnX (X = S, Se) are well matched and reproduced by first-principles calculation. Hall-effect and thermoelectric measurements revealed that SnX are p-type semiconductors with a high carrier density, larger than 1017 cm−3. According to the measurement results of the surface photovoltaic (SPV) response and ZT value, layered SnS can have a superior SPV (8.5 μV/μW) response ∼12× higher than that of SnSe, while SnSe has a ZT of 0.16, ∼4× larger than that of SnS in SnX (X = S, Se). Layered SnSe and SnS could possess great feasibility for application in thermoelectric power generation and solar energy conversion.
關聯:	ACS Applied Energy Materials 3(5), p.4896−4905
DOI:	10.1021/acsaem.0c00481
顯示於類別:	[物理學系暨研究所] 期刊論文

文件中的檔案:

檔案	描述	大小	格式	瀏覽次數
index.html		0Kb	HTML	132	檢視/開啟
Study of Structural, Thermoelectric, and Photoelectric Properties of Layered Tin Monochalcogenides SnX (X = S, Se) for Energy Application.pdf		3988Kb	Adobe PDF	3	檢視/開啟

在機構典藏中所有的資料項目都受到原著作權保護.

TAIR相關文章

資料載入中.....