English  |  正體中文  |  简体中文  |  全文笔数/总笔数 : 56552/90363 (63%)
造访人次 : 11827366      在线人数 : 128
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library & TKU Library IR team.
搜寻范围 查询小技巧:
  • 您可在西文检索词汇前后加上"双引号",以获取较精准的检索结果
  • 若欲以作者姓名搜寻,建议至进阶搜寻限定作者字段,可获得较完整数据
  • 进阶搜寻

    jsp.display-item.identifier=請使用永久網址來引用或連結此文件: http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/118759

    题名: Study of Structural, Thermoelectric, and Photoelectric Properties of Layered Tin Monochalcogenides SnX (X = S, Se) for Energy Application
    作者: Ho, Ching-Hwa;Lin, Wen-Yao;Chao, Liang-Chiun;Lee, Kuei-Yi;Inagaki, Jun;Hsueh(薛宏中), Hung-Chung
    关键词: 2D semiconductor;thermoelectric material;solar-cell material;band structure;in-plane anisotropy
    日期: 2020-04-14
    上传时间: 2020-06-04 12:10:13 (UTC+8)
    出版者: ACS publications
    摘要: SnS and SnSe are renowned energy materials that are applied for
    photoelectric and thermoelectric conversions owing to their suitable band gap, close
    to 1 eV, and superior figure of merit (ZT), larger than 0.1. In this paper, high-quality
    layered SnX (X = S, Se) crystals have been successfully grown by the chemical vapor
    transport (CVT) method. The crystal structure and band structure of SnX are
    studied, and their photoelectric and thermoelectric properties are characterized. In
    Raman measurement, four vibration modes with distinct angle-polarization
    dependence are simultaneously detected by both SnS and SnSe, verifying their
    similar orthorhombic layered structure with in-plane anisotropy. In-plane anisotropy
    of band-edge and interband transitions along a and b axes has also been measured
    experimentally using polarized thermoreflectance (PTR) from 0.7 to 5 eV. The
    anisotropic band edges of layered SnX (X = S, Se) are well matched and reproduced
    by first-principles calculation. Hall-effect and thermoelectric measurements revealed
    that SnX are p-type semiconductors with a high carrier density, larger than 1017 cm−3. According to the measurement results of the
    surface photovoltaic (SPV) response and ZT value, layered SnS can have a superior SPV (8.5 μV/μW) response ∼12× higher than
    that of SnSe, while SnSe has a ZT of 0.16, ∼4× larger than that of SnS in SnX (X = S, Se). Layered SnSe and SnS could possess great
    feasibility for application in thermoelectric power generation and solar energy conversion.
    關聯: ACS Applied Energy Materials 3(5), 4896−4905
    DOI: 10.1021/acsaem.0c00481
    显示于类别:[物理學系暨研究所] 期刊論文


    档案 描述 大小格式浏览次数



    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library & TKU Library IR teams. Copyright ©   - 回馈