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    题名: Study of Structural, Thermoelectric, and Photoelectric Properties of Layered Tin Monochalcogenides SnX (X = S, Se) for Energy Application
    作者: Ching-Hwa Ho;Wen-Yao Lin;Liang-Chiun Chao;Kuei-Yi Lee;Jun Inagaki;Hung-Chung Hsueh
    关键词: 2D semiconductor;thermoelectric material;solar-cell material;band structure;in-plane anisotropy
    日期: 2020-04-14
    上传时间: 2020-06-04 12:10:13 (UTC+8)
    出版者: ACS publications
    摘要: SnS and SnSe are renowned energy materials that are applied for
    photoelectric and thermoelectric conversions owing to their suitable band gap, close
    to 1 eV, and superior figure of merit (ZT), larger than 0.1. In this paper, high-quality
    layered SnX (X = S, Se) crystals have been successfully grown by the chemical vapor
    transport (CVT) method. The crystal structure and band structure of SnX are
    studied, and their photoelectric and thermoelectric properties are characterized. In
    Raman measurement, four vibration modes with distinct angle-polarization
    dependence are simultaneously detected by both SnS and SnSe, verifying their
    similar orthorhombic layered structure with in-plane anisotropy. In-plane anisotropy
    of band-edge and interband transitions along a and b axes has also been measured
    experimentally using polarized thermoreflectance (PTR) from 0.7 to 5 eV. The
    anisotropic band edges of layered SnX (X = S, Se) are well matched and reproduced
    by first-principles calculation. Hall-effect and thermoelectric measurements revealed
    that SnX are p-type semiconductors with a high carrier density, larger than 1017 cm−3. According to the measurement results of the
    surface photovoltaic (SPV) response and ZT value, layered SnS can have a superior SPV (8.5 μV/μW) response ∼12× higher than
    that of SnSe, while SnSe has a ZT of 0.16, ∼4× larger than that of SnS in SnX (X = S, Se). Layered SnSe and SnS could possess great
    feasibility for application in thermoelectric power generation and solar energy conversion.
    關聯: ACS Applied Energy Materials 3(5), 4896−4905
    DOI: 10.1021/acsaem.0c00481
    显示于类别:[物理學系暨研究所] 期刊論文


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