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    題名: Iodide recovery and boron removal from thin-film transistor liquid crystal display wastewater through forward osmosis
    作者: Chang, Hau-Ming;Chen, Shiao-Shing;Cai, Zhi-Sheng;Chang, Wen-Shing;Ray, Saikat Sinha;Nguyen, Nguyen Cong;Li, Chi-Wang;Paswan, Mithilesh
    關鍵詞: Forward osmosis;Iodide;Boron;Cetyltrimethylammonium bromide;Membrane distillation
    日期: 2020-06-10
    上傳時間: 2020-06-01 12:14:53 (UTC+8)
    摘要: For the first time, simultaneous iodide recovery and boron removal from thin-film transistor liquid crystal display wastewater were achieved using forward osmosis because iodide is a precious material and boron is toxic with 1 mg/L discharge standard in Taiwan. Cellulose triacetate and thin-film composite with aquaporin flat sheet membranes were tested for different feed solution, pH levels, and draw solution concentrations. The results indicated that the thin-film composite membrane had high boron and iodide rejections (98.4% and 98.3%, respectively) at a pH of 11; however, with a feed boron concentration of 600 mg/L, 9.8 mg/L boron was still present in the draw solution. Cationic surfactant cetyltrimethylammonium bromide was used to enhance the iodide recovery and boron removal efficiencies. Both efficiencies increased to 99.9% with 0.5 mM cetyltrimethylammonium bromide, and only 0.64 mg/L boron was present in the draw solution. In addition, negligible flux reduction was observed for forward osmosis process in the presence of cetyltrimethylammonium bromide. A membrane distillation system was used to concentrate and purify the MgCl2 draw solution. Thus, the hybrid forward osmosis-membrane distillation process can be applied for iodide recovery and boron removal in the thin-film transistor liquid crystal display industry.
    關聯: Journal of Cleaner Production 258, 120587
    DOI: 10.1016/J.JCLEPRO.2020.120587
    顯示於類別:[水資源及環境工程學系暨研究所] 期刊論文

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