English  |  正體中文  |  简体中文  |  全文筆數/總筆數 : 62822/95882 (66%)
造訪人次 : 4026775      線上人數 : 902
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library & TKU Library IR team.
搜尋範圍 查詢小技巧:
  • 您可在西文檢索詞彙前後加上"雙引號",以獲取較精準的檢索結果
  • 若欲以作者姓名搜尋,建議至進階搜尋限定作者欄位,可獲得較完整資料
  • 進階搜尋
    請使用永久網址來引用或連結此文件: https://tkuir.lib.tku.edu.tw/dspace/handle/987654321/118680


    題名: Quinary defect-rich ultrathin bimetal hydroxide nanosheets for water oxidation
    作者: Liu, Z.;Huang, Y. C.;Wang, Y.;Chen, J.;Yang, H.;Chen, X.;Tong, X.;Su, D.;Dong, C. L.;Wang, S.
    關鍵詞: quinary bimetal hydroxide nanosheets;exfoliation;in situ S;F co-filling;vacancies;electrochemical water oxidation
    日期: 2019-11-06
    上傳時間: 2020-06-01 12:13:04 (UTC+8)
    摘要: The electronic structure of layered double hydroxides (LDHs) can be modulated by heteroatom doping and creating vacancies. The number of exposed active sites can be enriched by exfoliating the bulk structure into fewer layers. Herein, we successfully achieved multielement doping and exfoliation for Co3Fe LDHs by one SF6-plasma etching step at room temperature (named as Co3Fe LDHs-SF6). The obtained Co3Fe LDHs-SF6 ultrathin nanosheets display outstanding oxygen evolution reaction (OER) activity, which only needs 268 mV overpotential to reach 10 mA cm–2. Tafel slope and charge transfer resistance are dramatically decreased indicating a faster reaction kinetic rate. The excellent OER activity can be attributed to an increased number of active sites and an optimized electronic structure modulated by the incorporation of electron-withdrawing F, electron-donating S, and abundant vacancies resulting in proper adsorption energy to oxygen species.
    關聯: ACS Applied Materials & Interfaces 11(47), p.44018-44025
    DOI: 10.1021/acsami.9b10315
    顯示於類別:[物理學系暨研究所] 期刊論文

    文件中的檔案:

    檔案 描述 大小格式瀏覽次數
    index.html0KbHTML120檢視/開啟
    Quinary defect-rich ultrathin bimetal hydroxide nanosheets for water oxidation.pdf4974KbAdobe PDF2檢視/開啟

    在機構典藏中所有的資料項目都受到原著作權保護.

    TAIR相關文章

    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library & TKU Library IR teams. Copyright ©   - 回饋