Atomic replacement effects on the band structure of doped perovskite thin films

doi:10.1038/s41598-019-44104-7

淡江大學機構典藏 > 理學院 > 物理學系暨研究所 > 期刊論文 > Item 987654321/117059

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題名:	Atomic replacement effects on the band structure of doped perovskite thin films
作者:	Cheng, S. L.;Du, C. H.;Chuang, T. H.;Lin, J. G.
日期:	2019-05-24
上傳時間:	2019-09-20 12:10:23 (UTC+8)
出版者:	Springer Nature
摘要:	The potential applications of perovskite manganite R1-xAxMnO3 (R = rare earth element; A = Sr, Ca) thin films have been continuously explored due to their multi-functional properties. In particular, the optimally hole-doped La0.67Ca0.33MnO3 thin film demonstrates a colossal magneto-resistance that is beneficial to the performance of spintronic devices. To understand the effect of R and A ions on the material properties, we systematically measure the resistivity, magnetization, and electronic energy states for three optimally hole-doped R0.67A0.33MnO3 thin films with R = La, Sm and A = Sr, Ca. Various energy parameters are derived based on the X-ray absorption and X-ray photoelectron spectra, including the band gap, the charge frustration energy and the magnetic exchange energy. It is interesting to find that the replacement of La with Sm is more effective than that of Sr with Ca in terms of tuning the electrical property, the Curie temperature, and the band gap. The strain-induced reduction of the O 2p- Mn 3d hybridization and the interplay of R/A site disorder and strain effect are discussed. The results of this study provide useful information for the band design of perovskite oxide films.
關聯:	Scientific Report 9, 7828
DOI:	10.1038/s41598-019-44104-7
顯示於類別:	[物理學系暨研究所] 期刊論文

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