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    Please use this identifier to cite or link to this item: http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/116978


    Title: Thienoisoindigo-Based Dopant-Free Hole Transporting Material for Efficient p–i–n Perovskite Solar Cells with the Grain Size in Micrometer Scale
    Authors: Chen, Chih-Hsin;Hsu, Yu-Ting;Wang, Bo-Cheng;Chung, Chung-Lin;Chen, Chih-Ping
    Date: 2018-12-25
    Issue Date: 2019-09-13 12:10:35 (UTC+8)
    Publisher: ACS Publications
    Abstract: In this study, a series of 2,2′ and 3,3′ substituted thienoisoindigo (TII)-based small molecules (H3–H7) were synthesized by using 1,3-di(9H-carbazol-9-yl) benzene, N-phenylcarbazole, triphenylamine, and benzene as electron donor (D) at the periphery, while TII as electron acceptor (A) at the core. The highest occupied molecular orbital energy levels of H3–H7 range from −5.31 to −5.43 eV, while their lowest unoccupied molecular orbital energy levels range from −3.43 to −3.59 eV. Under AM 1.5 condition, the perovskite solar cell (PSC) with inverted p–i–n device structure using H7 as the dopant-free hole transporting material achieved a power conversion efficiency (PCE) of 12.1%, which is comparable to that using PEDOT:PSS as the hole transporting material (12.0%). Under an argon atmosphere, the PCE of H7-based PSC did not decay within 168 h, and it can retain 86.3% of its original PCE after 1000 h. The morphology study revealed that the film of H3–H7 was smooth and hydrophobic, while the perovskite film spin-coated on H3–H7 film was uniform with the grain size in micrometer scale. Although the time-resolved photoluminescence spectra of the perovskite films suggested that the hole extraction capability of H7 is weaker than that of PEDOT:PSS, the improved film morphology of the film in H7-based PSC accounts for its comparable PCE to PEDOT:PSS-based PSC.
    Relation: The Journal of Physical Chemistry C 123(3), p.1602-1609
    DOI: 10.1021/acs.jpcc.8b10070
    Appears in Collections:[Graduate Institute & Department of Chemistry] Journal Article

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