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    jsp.display-item.identifier=請使用永久網址來引用或連結此文件: https://tkuir.lib.tku.edu.tw/dspace/handle/987654321/116771

    题名: Photoluminescence of CuInSe2/GaN and CuInSe2/InN
    作者: Phoebe Nicole G. Perez;Cheng-Chang Yu;Cheng-Hung Shih;Chen-Chi Yang;Emmanuel A. Florido;Dah-Chin Ling;Der-Jun Jang
    关键词: Photoluminescence;Copper indium diselenide;Gallium nitride;Indium nitride;Solar cell absorber
    日期: 2019-09
    上传时间: 2019-05-30 12:10:23 (UTC+8)
    出版者: Elsevier B.V.
    摘要: The power and temperature dependent photoluminescence (PL) of epitaxially grown In-rich CuInSe2 (CIS) and Cu-rich CIS deposited on N-polar GaN and InN were investigated in this paper. The In-rich CIS/GaN has two PL emissions characterized by a donor-acceptor pair (DAP) peak at 0.92 eV and an excitonic peak at 1.08/1.1 eV. On the other hand, the Cu-rich CIS/GaN has four PL emissions characterized by two DAP peaks at 0.86 eV and 0.94 eV, free-to-bound recombination peak at 0.97 eV and an excitonic peak at 1.03 eV. Identification of these defects in the CIS absorber layer is crucial for the improvement of the device efficiency. The PL emission of the CIS/InN closely resembles that of the Cu-rich CIS/GaN. For all the samples, the PL intensity increased with excitation power while the PL intensity decreased with temperature. The obtained power coefficients and activation energies support the proposed mechanism causing the luminescence. The defects present in CIS/GaN and CIS/InN were also identified. The results from this study are consistent with those of CIS single crystals and show that the CIS absorber layer can be incorporated with III-nitride materials, and its absorption can be extended beyond the spectrum covered by plain CIS.
    關聯: Journal of Luminescence 213, p.364-369
    DOI: 10.1016/j.jlumin.2019.05.018
    显示于类别:[物理學系暨研究所] 期刊論文


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