Nano-Oxide-Layer-Induced Magnetic Properties of Ir-Mn-Based Spin-Valve Field Sensors

淡江大學機構典藏 > 理學院 > 物理學系暨研究所 > 期刊論文 > Item 987654321/115548

jsp.display-item.identifier=請使用永久網址來引用或連結此文件: https://tkuir.lib.tku.edu.tw/dspace/handle/987654321/115548

题名:	Nano-Oxide-Layer-Induced Magnetic Properties of Ir-Mn-Based Spin-Valve Field Sensors
作者:	Srivastava, M.K.;Huang, K.-F.;Huang, H.-H.;Weng, R.;Pong, W.-F.;Lai, C.-H.
关键词:	Couplings;Sensors;Magnetic field measurement;Films;Annealing;Magnetic separation
日期:	2016-09-15
上传时间:	2018-11-08 12:11:34 (UTC+8)
出版者:	IEEE
摘要:	We report modification of the magnetic properties of Ir-Mn-based bottom spin-valve devices after insertion of a thin Fe-based nano-oxide layer (NOL). A sheet film with layer sequence Si/Ta/Pt/Ir20Mn80/Co/Ru/Co/FeOx/Co/Cu/Co/ Ni80Fe20/Ta was grown to fabricate the devices. Magnetization, magneto-transport, angle-dependent resistance, and Fe L3,2-edge X-ray absorption spectroscopy were performed on the sheet film and microfabricated devices. The sheet film and devices had in-plane orthogonal interlayer coupling between the Co layers across the NOL. The sensing capability of the devices was tested and it appears that the NOL affected the free layer and hence the sensing direction of the devices. However, stray fields originating from the reference layer may also influence the free layer. With careful optimization of the NOL and layer structure, the devices may be used as two-axis field sensors after a relatively simple, single-step annealing process.
關聯:	IEEE Magnetics Letters 7, 3107005
DOI:	10.1109/LMAG.2016.2610407
显示于类别:	[物理學系暨研究所] 期刊論文

文件中的档案:

档案	描述	大小	格式	浏览次数
index.html		0Kb	HTML	149	检视/开启
Nano-Oxide-Layer-Induced Magnetic Properties of Ir-Mn-Based Spin-Valve Field Sensors.pdf		1584Kb	Adobe PDF	1	检视/开启

在機構典藏中所有的数据项都受到原著作权保护.

TAIR相关文章