English  |  正體中文  |  简体中文  |  全文筆數/總筆數 : 55531/89856 (62%)
造訪人次 : 10982713      線上人數 : 383
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library & TKU Library IR team.
搜尋範圍 查詢小技巧:
  • 您可在西文檢索詞彙前後加上"雙引號",以獲取較精準的檢索結果
  • 若欲以作者姓名搜尋,建議至進階搜尋限定作者欄位,可獲得較完整資料
  • 進階搜尋
    請使用永久網址來引用或連結此文件: http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/115548

    題名: Nano-Oxide-Layer-Induced Magnetic Properties of Ir-Mn-Based Spin-Valve Field Sensors
    作者: Srivastava, M.K.;Huang, K.-F.;Huang, H.-H.;Weng, R.;Pong, W.-F.;Lai, C.-H.
    關鍵詞: Couplings;Sensors;Magnetic field measurement;Films;Annealing;Magnetic separation
    日期: 2016-09-15
    上傳時間: 2018-11-08 12:11:34 (UTC+8)
    出版者: IEEE
    摘要: We report modification of the magnetic properties of Ir-Mn-based bottom spin-valve devices after insertion of a thin Fe-based nano-oxide layer (NOL). A sheet film with layer sequence Si/Ta/Pt/Ir20Mn80/Co/Ru/Co/FeOx/Co/Cu/Co/ Ni80Fe20/Ta was grown to fabricate the devices. Magnetization, magneto-transport, angle-dependent resistance, and Fe L3,2-edge X-ray absorption spectroscopy were performed on the sheet film and microfabricated devices. The sheet film and devices had in-plane orthogonal interlayer coupling between the Co layers across the NOL. The sensing capability of the devices was tested and it appears that the NOL affected the free layer and hence the sensing direction of the devices. However, stray fields originating from the reference layer may also influence the free layer. With careful optimization of the NOL and layer structure, the devices may be used as two-axis field sensors after a relatively simple, single-step annealing process.
    關聯: IEEE Magnetics Letters 7, 3107005
    DOI: 10.1109/LMAG.2016.2610407
    顯示於類別:[物理學系暨研究所] 期刊論文


    檔案 描述 大小格式瀏覽次數
    Nano-Oxide-Layer-Induced Magnetic Properties of Ir-Mn-Based Spin-Valve Field Sensors.pdf1584KbAdobe PDF0檢視/開啟



    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library & TKU Library IR teams. Copyright ©   - 回饋