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    Please use this identifier to cite or link to this item: http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/115180

    Title: An FET With a Source Tunneling Barrier Showing Suppressed Short-Channel Effects for Low-Power Applications
    Authors: Hsieh, Yu-Feng;Chen, Si-Hua;Chen, Nan-Yow;Lee, Wen-Jay;Tsai, Jyun-Hwei;Chen, Chun-Nan;Chiang, Meng-Hsueh;Lu, Darsen D.;Kao, Kuo-Hsing
    Keywords: Field effect transistors;Silicon;Tunneling;Heterojunctions;Logic gates;Effective mass
    Date: 2018-01-23
    Issue Date: 2018-10-11 12:10:46 (UTC+8)
    Publisher: IEEE
    Abstract: A device design technique using tunneling barriers (TBs) for reducing the short-channel effects (SCEs) is proposed. By introducing TBs at the source and drain junctions of a Si FET, the threshold voltage (Vth) rolloff can be significantly suppressed. This is because the TBs weaken the electrical coupling between drain bias and transmission/current spectrum in energy. Specifically, as compared with a conventional FET, the Vth roll-off for channel length reduction from 20 to 5 nm is mitigated by more than 40% when a thin TB is embedded at the source junction. This paper further reveals that the TB at the source junction dominates the physical mechanism minimizing the SCEs of the TBFET, and thus the device performance can be improved appreciably by removing the TB at the drain side and by decreasing the TB height at the source side.
    DOI: 10.1109/TED.2018.2791467
    Appears in Collections:[Graduate Institute & Department of Physics] Journal Article

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