Minimizing write amplification to enhance lifetime of large-page flash-memory storage devices

淡江大學機構典藏 > 工學院 > 電機工程學系暨研究所 > 會議論文 > Item 987654321/114977

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題名:	Minimizing write amplification to enhance lifetime of large-page flash-memory storage devices
作者:	Wang, Wei-Lin;Chen, Tseng-Yi;Chang, Yuan-Hao;Wei, Hsin-Wen;Shih, Wei-Kuan
關鍵詞:	Compression-based FTL;large ash page;ash lifetime
日期:	2018-06-24
上傳時間:	2018-09-20 12:12:26 (UTC+8)
摘要:	Due to the decreasing endurance of ash chips, the lifetime of ash drives has become a critical issue. To resolve this issue, various techniques such as wear-leveling and error correction code have been proposed to reduce the bit error rates of ash storage devices. In contrast to these techniques, we observe that minimizing write amplication is another promising direction to enhance the lifetime of a ash storage device. However, the development trend of large-page ash memory exacerbates the write amplication issue. In this work, we present a compression-based management design to deal with compressed data updates and internal fragmentation in ash pages. us, it can minimize write amplication by only updating the modi- ed part of ash pages with the support of data reduction techniques; and the reduced write amplication degree is more signicant when the ash page size becomes larger due to the development trend. is design is orthogonal to wear-leveling and error correction techniques and thus can cooperate with them to further enhance the lifetime of a ash device. Based on a series of experiments, the results demonstrate that the proposed design can eectively improve the lifetime of a ash storage device by reducing write amplication.
關聯:	In the proceedings of DAC 116:1-116:6
顯示於類別:	[電機工程學系暨研究所] 會議論文

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