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    题名: Minimizing write amplification to enhance lifetime of large-page flash-memory storage devices
    作者: Wang, Wei-Lin;Chen, Tseng-Yi;Chang, Yuan-Hao;Wei, Hsin-Wen;Shih, Wei-Kuan
    关键词: Compression-based FTL;large ƒash page;ƒash lifetime
    日期: 2018-06-24
    上传时间: 2018-09-20 12:12:26 (UTC+8)
    摘要: Due to the decreasing endurance of ƒash chips, the lifetime of ƒash
    drives has become a critical issue. To resolve this issue, various techniques
    such as wear-leveling and error correction code have been
    proposed to reduce the bit error rates of ƒash storage devices. In
    contrast to these techniques, we observe that minimizing write ampli€cation
    is another promising direction to enhance the lifetime of a
    ƒash storage device. However, the development trend of large-page
    ƒash memory exacerbates the write ampli€cation issue. In this work,
    we present a compression-based management design to deal with
    compressed data updates and internal fragmentation in ƒash pages.
    ‘us, it can minimize write ampli€cation by only updating the modi-
    €ed part of ƒash pages with the support of data reduction techniques;
    and the reduced write ampli€cation degree is more signi€cant when
    the ƒash page size becomes larger due to the development trend. ‘is
    design is orthogonal to wear-leveling and error correction techniques
    and thus can cooperate with them to further enhance the lifetime of a
    ƒash device. Based on a series of experiments, the results demonstrate
    that the proposed design can e‚ectively improve the lifetime of a ƒash
    storage device by reducing write ampli€cation.
    關聯: In the proceedings of DAC 116:1-116:6
    显示于类别:[電機工程學系暨研究所] 會議論文

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