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    题名: X光吸收光譜對銅摻雜之鈦鎳合金(Ti50Ni50-xCux)電子結構的研究
    其它题名: Electronic structure of cu-doped Ti-Ni alloy(Ti50Ni50-xCux)studied by X-ray absorption spectroscopy
    作者: 劉柏佑;Liou, Bo-You
    贡献者: 淡江大學物理學系碩士班
    張經霖;Chang, Ching-Lin
    关键词: X光吸收光譜;形狀記憶合金;XANES;Shape Memory Alloys
    日期: 2017
    上传时间: 2018-08-03 14:46:05 (UTC+8)
    摘要: 我們以X光吸收光譜對鈦鎳摻雜銅合金Ti50Ni50-xCux (x=5,7.5,10,15,20,25,30)進行研究。從Ti L2,3 -edge譜中,Ti 3d 未占據態的變化趨勢與銅含量小於15%(x<15)電阻率的趨勢相反跟電子熱導率趨勢一致。從Ni L2,3 -edge譜中,Ni 3d未占據態的變化趨勢與銅含量大於15%(x>15)電阻率的趨勢相反跟電子熱導率趨勢一致。
    從Ni的K-edge 譜中,前置吸收峰在Ti50Ni50-xCux系列樣品(x=20、25、30)隨著x含量上升,3d-4p混成未佔據態有序下降。從Cu的K-edge譜中,前置吸收峰在Ti50Ni50-xCux系列樣品(x=20、25、30)隨著x含量上升,3d-4p混成未佔據態有序上升。可知Ti50Ni50-xCux系列樣品(x=20、25、30) 電子由Cu 3d-4p混成軌域向Ni 3d-4p混成軌域遷移。
    We have performed X-ray absorption near edge structure (XANES) to study the shape memory alloys Ti50Ni50-xCux (x=5,7.5,10,15,20,25,30). From Ti L2,3 -edge spectra, the variation of Ti 3d unoccupied states correlates well with electronic thermal conductivity but instead trends with the electric resistivity on the copper content less than 15%(x<15). From Ni L2,3 -edge spectra, the variation of Ni 3d unoccupied states correlates well with electronic thermal conductivity but instead trends with the electric resistivity on the copper content greater than 15%(x>15).
    From Ni K -edge spectra, pre-absorption peak at Ti50Ni50-xCux (x=20、25、30) with the increase of x content, 3d-4p mixed with unordered state orderly decline. From Cu K -edge spectra, pre-absorption peak at Ti50Ni50-xCux (x=20、25、30) with the increase of x content, 3d-4p mixed with unordered state orderly rise. It can be seen that the Ti50Ni50-xCux (x=20、25、30) electrons are intermixed by the Cu 3d-4p into the orbital domain to Ni 3d-4p.
    显示于类别:[物理學系暨研究所] 學位論文

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