English  |  正體中文  |  简体中文  |  Items with full text/Total items : 58286/91808 (63%)
Visitors : 13817576      Online Users : 60
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library & TKU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version
    Please use this identifier to cite or link to this item: http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/114234

    Title: 可能為二維電荷密度波材料之單晶Sr3Ir4Sn13樣品的電子與原子結構
    Other Titles: Electronic and atomic structures of Sr3Ir4Sn13 single crystal : a possible 2D-charge density wave material
    Authors: 吳政哲;Wu, Cheng-Che
    Contributors: 淡江大學物理學系碩士班
    彭維鋒;Pong, Way-Faung
    Keywords: 電荷密度波;X光吸收近邊緣結構;延伸X光吸收精細結構;CDW;XANES;EXAFS
    Date: 2017
    Issue Date: 2018-08-03 14:45:59 (UTC+8)
    Abstract: 本論文主要藉由同步輻射相關實驗研究三元複合錫化物Sr3Ir4Sn13中二維電荷密度波(two-dimensional charge density wave、2D-CDW)。實驗技術上包括X光散射(X-ray Scattering、XRS)、X光吸收近邊緣結構(X-ray absorption near-edge structures、XANES)、延伸X光吸收精細結構(Extended X-ray absorption fine structure、EXAFS),探討高品質的 Sr3Ir4Sn13單晶樣品於相變溫度147K (T* ≈ 147 K) 時的電子與原子結構。
    X光散射實驗中,在相變溫度下一系列衛星峰的發現,說明可能在沿著(1 1 0)平面上產生了2D-CDW。相變溫度下當沿著(1 1 0)平面,在EXAFS以及相衍生分析中,發現兩種不同的鍵結長度(Sn1(2)-Sn2),證實了Sn原子的扭曲只發生在(1 1 0)平面上,與2D-CDW有強烈的相關性;而在XANES實驗中,Ir 5d軌域未佔據態的增加以及未佔據態幾乎沒有改變的Sn 5p軌域,說明了在電阻率的變化上,Ir 5d軌域未佔據態的改變相較於Sn 5p軌域扮演較重要的角色。因此在 Sr3Ir4Sn13樣品中,電子以及原子結構與2D-CDW有著密切的關係。
    X-ray scattering (XRS), x-ray absorption near-edge structures (XANES) and extended x-ray absorption fine structure (EXAFS) spectroscopic techniques were used to study the electronic and atomic structures of high-quality Sr3Ir4Sn13 (SIS) single crystal both below and above transition temperature (T* ≈ 147 K).
    The evolution of a series of modulated satellite peaks below the transition temperature in XRS experiment indicated the formation of a possible two-dimensional charge density wave (2D-CDW) in the (110) plane. EXAFS phase derivative analysis supports the CDW-like formation by revealing the different bond distances [Sn1(2)-Sn2] below and above the T* in the (110) plane. XANES spectra at the Ir L3-edge and the Sn K-edge demonstrated an increase (decrease) in the unoccupied (occupied) density of Ir 5d-derived states and nearly constant density of Sn 5p-derived states at temperatures T < T*, in the (110) plane. These observations clearly suggest that the Ir 5d-derived states are closely related to the anomalous resistivity transition. Accordingly, a close relationship exists between local electronic and atomic structures and the 2D-CDW-like phase in the SIS single crystal.
    Appears in Collections:[Graduate Institute & Department of Physics] Thesis

    Files in This Item:

    File Description SizeFormat

    All items in 機構典藏 are protected by copyright, with all rights reserved.

    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library & TKU Library IR teams. Copyright ©   - Feedback