High spin state driven magnetism and thermoelectricity in Mn doped topological insulator Bi2Se3

淡江大學機構典藏 > 理學院 > 物理學系暨研究所 > 期刊論文 > Item 987654321/113675

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題名:	High spin state driven magnetism and thermoelectricity in Mn doped topological insulator Bi2Se3
作者:	V. K. Maurya;C. L. Dong;C. L. Chen;K. Asokan;S. Patnaik
關鍵詞:	Magnetic doping;Topological insulators
日期:	2018-06-15
上傳時間:	2018-06-09 12:10:20 (UTC+8)
出版者:	ELSEVIER
摘要:	We report on the synthesis, and structural – magnetic characterizations of Mn doped Bi2Se3 towards achieving a magnetically doped topological insulator. High quality single crystals of MnxBi2−xSe3 (x = 0, 0.03, 0.05, 0.1) are grown and analysed by X-ray diffraction (XRD), Low Energy Electron Diffraction (LEED), Scanning electron microscopy (SEM), and X-ray absorption near-edge structure spectroscopy (XANES). Magnetic properties of these samples under ZFC-FC protocol and isothermal magnetization confirm ferromagnetic correlation above x = 0.03 value. XANES measurements confirm that the dopant Mn is in Mn2+ state. This is further reconfirmed to be in high spin state by fitting magnetic data with Brillouin function for J = 5/2. Both Hall and Seebeck measurements indicate a sign change of charge carriers above x = 0.03 value of Mn doping. We propose Mn doped Bi2Se3 to be a potential candidate for electromagnetic and thermoelectric device applications involving topological surface states.
關聯:	Journal of Magnetism and Magnetic Materials 456, p.1-5
DOI:	10.1016/j.jmmm.2018.01.096
顯示於類別:	[物理學系暨研究所] 期刊論文

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