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    請使用永久網址來引用或連結此文件: http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/112435

    題名: Carrier recombination dynamics in electronically coupled multi-layer InAs/GaAs quantum dots
    作者: Antaryami Mohantaa;Der-Jun Jang;Shu-Kai Lu;Dah-Chin Ling;J.S. Wang;R.-B. Chen;F.-C. Chuang
    關鍵詞: Photoluminescence;InAs/GaAs quantum dots;Carrier dynamics;Phonon bottleneck effect
    日期: 2018-03
    上傳時間: 2017-12-19 02:11:06 (UTC+8)
    出版者: Elsevier
    摘要: Optical properties of multi-layer InAs/GaAs quantum dots (QDs) with different GaAs spacer layer thicknesses
    (dGaAs) of 20, 15 and 10 nm are investigated by time-integrated and time-resolved photoluminescence (PL)
    spectroscopy. The energy spacing between ground and excited state is observed to be decreased with decrease in
    dGaAs and increased with increase in excitation intensity. The rate of carrier capture and energy relaxation in QDs
    is found to be slower at excitation energy of 3.06 eV than that at 1.53 eV which is attributed to intervalley
    scattering in GaAs. The effect of intervalley scattering process in GaAs on decay time is negligible for dGaAs of
    20 nm and is prominent for dGaAs ≤ 15 nm.
    關聯: Journal of Luminescence, 195, 109 (2018)
    DOI: 10.1016/j.jlumin.2017.11.009
    顯示於類別:[物理學系暨研究所] 期刊論文


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