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    Please use this identifier to cite or link to this item: https://tkuir.lib.tku.edu.tw/dspace/handle/987654321/112435

    Title: Carrier recombination dynamics in electronically coupled multi-layer InAs/GaAs quantum dots
    Authors: Antaryami Mohantaa;Der-Jun Jang;Shu-Kai Lu;Dah-Chin Ling;J.S. Wang;R.-B. Chen;F.-C. Chuang
    Keywords: Photoluminescence;InAs/GaAs quantum dots;Carrier dynamics;Phonon bottleneck effect
    Date: 2018-03
    Issue Date: 2017-12-19 02:11:06 (UTC+8)
    Publisher: Elsevier
    Abstract: Optical properties of multi-layer InAs/GaAs quantum dots (QDs) with different GaAs spacer layer thicknesses
    (dGaAs) of 20, 15 and 10 nm are investigated by time-integrated and time-resolved photoluminescence (PL)
    spectroscopy. The energy spacing between ground and excited state is observed to be decreased with decrease in
    dGaAs and increased with increase in excitation intensity. The rate of carrier capture and energy relaxation in QDs
    is found to be slower at excitation energy of 3.06 eV than that at 1.53 eV which is attributed to intervalley
    scattering in GaAs. The effect of intervalley scattering process in GaAs on decay time is negligible for dGaAs of
    20 nm and is prominent for dGaAs ≤ 15 nm.
    Relation: Journal of Luminescence, 195, 109 (2018)
    DOI: 10.1016/j.jlumin.2017.11.009
    Appears in Collections:[Graduate Institute & Department of Physics] Journal Article

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