淡江大學機構典藏:Item 987654321/111894
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    题名: Chemical Modification of Graphene Oxide by Nitrogenation: An X-ray Absorption and Emission Spectroscopy Study
    作者: Cheng-Hao Chuang;Sekhar C. Ray;Debarati Mazumder;Surbhi Sharma;Abhijit Ganguly;Pagona Papakonstantinou;Jau-Wern Chiou;Huang-Ming Tsai;Hung-Wei Shiu;Chia-Hao Chen;Hong-Ji Lin;Jinghua Guo;Way-Faung Pong
    日期: 2017-02-10
    上传时间: 2017-10-31 02:10:44 (UTC+8)
    出版者: Nature Publishing Group
    摘要: Nitrogen-doped graphene oxides (GO:Nx) were synthesized by a partial reduction of graphene oxide (GO) using urea [CO(NH2)2]. Their electronic/bonding structures were investigated using X-ray absorption near-edge structure (XANES), valence-band photoemission spectroscopy (VB-PES), X-ray emission spectroscopy (XES) and resonant inelastic X-ray scattering (RIXS). During GO:Nx synthesis, different nitrogen-bonding species, such as pyrrolic/graphitic-nitrogen, were formed by replacing of oxygen-containing functional groups. At lower N-content (2.7 at%), pyrrolic-N, owing to surface and subsurface diffusion of C, N and NH is deduced from various X-ray spectroscopies. In contrast, at higher N-content (5.0 at%) graphitic nitrogen was formed in which each N-atom trigonally bonds to three distinct sp2-hybridized carbons with substitution of the N-atoms for C atoms in the graphite layer. Upon nitrogen substitution, the total density of state close to Fermi level is increased to raise the valence-band maximum, as revealed by VB-PES spectra, indicating an electron donation from nitrogen, molecular bonding C/N/O coordination or/and lattice structure reorganization in GO:Nx. The well-ordered chemical environments induced by nitrogen dopant are revealed by XANES and RIXS measurements.
    關聯: Scientific Reports 7, 42235
    DOI: 10.1038/srep42235
    显示于类别:[電機工程學系暨研究所] 期刊論文

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