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|Title: ||Chemical Modification of Graphene Oxide by Nitrogenation: An X-ray Absorption and Emission Spectroscopy Study|
|Authors: ||Cheng-Hao Chuang, Sekhar C. Ray, Debarati Mazumder, Surbhi Sharma, Abhijit Ganguly, Pagona Papakonstantinou, Jau-Wern Chiou, Huang-Ming Tsai, Hung-Wei Shiu, Chia-Hao Chen, Hong-Ji Lin, Jinghua Guo & Way-Faung Pong|
|Issue Date: ||2017-10-31 02:10:44 (UTC+8)|
|Abstract: ||Nitrogen-doped graphene oxides (GO:Nx) were synthesized by a partial reduction of graphene oxide (GO) using urea [CO(NH2)2]. Their electronic/bonding structures were investigated using X-ray absorption near-edge structure (XANES), valence-band photoemission spectroscopy (VB-PES), X-ray emission spectroscopy (XES) and resonant inelastic X-ray scattering (RIXS). During GO:Nx synthesis, different nitrogen-bonding species, such as pyrrolic/graphitic-nitrogen, were formed by replacing of oxygen-containing functional groups. At lower N-content (2.7 at%), pyrrolic-N, owing to surface and subsurface diffusion of C, N and NH is deduced from various X-ray spectroscopies. In contrast, at higher N-content (5.0 at%) graphitic nitrogen was formed in which each N-atom trigonally bonds to three distinct sp2-hybridized carbons with substitution of the N-atoms for C atoms in the graphite layer. Upon nitrogen substitution, the total density of state close to Fermi level is increased to raise the valence-band maximum, as revealed by VB-PES spectra, indicating an electron donation from nitrogen, molecular bonding C/N/O coordination or/and lattice structure reorganization in GO:Nx. The well-ordered chemical environments induced by nitrogen dopant are revealed by XANES and RIXS measurements.|
|Relation: ||Scientific Reports 7, 42235 (2017)|
|Appears in Collections:||[物理學系暨研究所] 期刊論文|
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