Luminescent properties and microstructure of SiC doped AlON: Eu2+ phosphors

doi:10.1016/j.jallcom.2017.07.156

機構典藏 > College of Sciences > Graduate Institute & Department of Physics > Journal Article > Item 987654321/111891

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Title:	Luminescent properties and microstructure of SiC doped AlON: Eu2+ phosphors
Authors:	Liang-Jun Yin, Chao Cai, Hui Wang, Yu-Jie Zhao, Hao Van Bui, Xian Jian, Hui Tang, Xin Wang, Long-Jiang Deng, Xin Xu, Ming-Hsien Lee
Keywords:	Oxynitride;Photoluminescence;Rare-earths;First principles theory
Date:	2017-11-25
Issue Date:	2017-10-31 02:10:40 (UTC+8)
Abstract:	Superior thermal quenching and degradation of phosphors are required for long lifetime lighting devices, such as light-emitting diodes, which can be realized through composition modification. Here, Al-N bonds in AlON: Eu2+ phosphors are substituted by higher bond order of Si-C. Photoluminescence (PL) results show thermal quenching (at 150 °C) and thermal degradation (after 600 °C treatment in air) are improved by 5% and 8% with a small decrease of PL intensity in 5% SiC doped AlON: Eu2+ phosphor. To explain these observations, first-principles computational study was performed to understand the Si and C configuration in AlON:Eu2+. The calculations reveal that Si and C elements are not randomly distributed in AlON lattice. It was found that Si prefers occupying tetrahedral sites (Td-Si) and the insertion of C in Td-Si is always energetically favorable, which results in the formation of SiC4 and SiNC3 clusters. Thus, the Al-N substitution by Si-C induces a stronger local structure, which accounts for the emission redshift and better thermal stability.
Relation:	Journal of Alloys and Compounds 725(25), p.217-226
DOI:	10.1016/j.jallcom.2017.07.156
Appears in Collections:	[Graduate Institute & Department of Physics] Journal Article

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