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    Please use this identifier to cite or link to this item: http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/111891


    Title: Luminescent properties and microstructure of SiC doped AlON: Eu2+ phosphors
    Authors: Liang-Jun Yin*, Chao Cai, Hui Wang, Yu-Jie Zhao, Hao Van Bui, Xian Jian, Hui Tang, Xin Wang, Long-Jiang Deng, Xin Xu, Ming-Hsien Lee*
    Keywords: Oxynitride;Photoluminescence;Rare-earths;First principles theory
    Date: 2017-11-25
    Issue Date: 2017-10-31 02:10:40 (UTC+8)
    Abstract: Superior thermal quenching and degradation of phosphors are required for long lifetime lighting devices, such as light-emitting diodes, which can be realized through composition modification. Here, Al-N bonds in AlON: Eu2+ phosphors are substituted by higher bond order of Si-C. Photoluminescence (PL) results show thermal quenching (at 150 °C) and thermal degradation (after 600 °C treatment in air) are improved by 5% and 8% with a small decrease of PL intensity in 5% SiC doped AlON: Eu2+ phosphor. To explain these observations, first-principles computational study was performed to understand the Si and C configuration in AlON:Eu2+. The calculations reveal that Si and C elements are not randomly distributed in AlON lattice. It was found that Si prefers occupying tetrahedral sites (Td-Si) and the insertion of C in Td-Si is always energetically favorable, which results in the formation of SiC4 and SiNC3 clusters. Thus, the Al-N substitution by Si-C induces a stronger local structure, which accounts for the emission redshift and better thermal stability.
    Relation: Journal of Alloys and Compounds, Volume 725, 25 November (2017), Pages 217-226
    Appears in Collections:[物理學系暨研究所] 期刊論文

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