淡江大學機構典藏:Item 987654321/111848
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    題名: Correlation between p-type conductivity and electronic structure of Cr-deficient CuCr1−xO2 (x = 0--0.1)
    作者: Shashi B. Singh;L. T. Yang;Y. F. Wang;Y. C. Shao;C. W. Chiang;J. W. Chiou;K. T. Lin;S. C. Chen;B. Y. Wang;C. H. Chuang;D. C. Ling;W. F. Pong;M.-H. Tsai;H. M. Tsai;C. W. Pao;H. W. Shiu;C. H. Chen;H.-J. Lin;J. F. Lee;H. Yamane;N. Kosugi
    日期: 2012-12-07
    上傳時間: 2017-10-26 02:10:13 (UTC+8)
    出版者: College Park: American Physical Society
    摘要: The correlation between the p-type hole conduction and the electronic structures of Cr-deficient CuCr1−xO2
    (x = 0−0.1) compounds was investigated using O K-, Cu, and Cr L3,2-edge x-ray absorption near-edge structure
    (XANES), scanning photoelectron microscopy, and x-ray emission spectroscopy measurements. XANES spectra
    reveal a gradual increase in the Cu valence from Cu1+ to Cu2+ with increasing Cr deficiency x, whereas, the
    valence of Cr remains constant as Cr3+. These results indicate that the p-type conductivity in the CuCr1−xO2
    samples is enhanced by a Cu1+-O-Cu2+ rather than a Cr3+-Cr4+ or direct Cu1+-Cu2+ hole mechanism. Remarkable
    Cr-deficiency-induced changes in the densities of Cu 3d, Cu 3d-O 2p, and O 2p states at or near the valence-band
    maximum or the Fermi level were also observed. In addition, a crossover of conduction mechanism from thermally
    activated (TA) hopping to a combination of TA and Mott’s three-dimensional variable range hopping occurs
    around 250 K.
    關聯: Phys. Rev. B 86, 241103(R)
    DOI: 10.1103/PhysRevB.86.241103
    顯示於類別:[物理學系暨研究所] 期刊論文

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