Correlation between p-type conductivity and electronic structure of Cr-deficient CuCr1−xO2 (x = 0--0.1)

doi:10.1103/PhysRevB.86.241103

淡江大學機構典藏 > 工學院 > 電機工程學系暨研究所 > 期刊論文 > Item 987654321/111848

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題名:	Correlation between p-type conductivity and electronic structure of Cr-deficient CuCr1−xO2 (x = 0--0.1)
作者:	Shashi B. Singh;L. T. Yang;Y. F. Wang;Y. C. Shao;C. W. Chiang;J. W. Chiou;K. T. Lin;S. C. Chen;B. Y. Wang;C. H. Chuang;D. C. Ling;W. F. Pong;M.-H. Tsai;H. M. Tsai;C. W. Pao;H. W. Shiu;C. H. Chen;H.-J. Lin;J. F. Lee;H. Yamane;N. Kosugi
日期:	2012-12-07
上傳時間:	2017-10-26 02:10:13 (UTC+8)
出版者:	College Park: American Physical Society
摘要:	The correlation between the p-type hole conduction and the electronic structures of Cr-deficient CuCr1−xO2(x = 0−0.1) compounds was investigated using O K-, Cu, and Cr L3,2-edge x-ray absorption near-edge structure(XANES), scanning photoelectron microscopy, and x-ray emission spectroscopy measurements. XANES spectra reveal a gradual increase in the Cu valence from Cu1+ to Cu2+ with increasing Cr deficiency x, whereas, the valence of Cr remains constant as Cr3+. These results indicate that the p-type conductivity in the CuCr1−xO2 samples is enhanced by a Cu1+-O-Cu2+ rather than a Cr3+-Cr4+ or direct Cu1+-Cu2+ hole mechanism. Remarkable Cr-deficiency-induced changes in the densities of Cu 3d, Cu 3d-O 2p, and O 2p states at or near the valence-band maximum or the Fermi level were also observed. In addition, a crossover of conduction mechanism from thermally activated (TA) hopping to a combination of TA and Mott’s three-dimensional variable range hopping occurs around 250 K.
關聯:	Phys. Rev. B 86, 241103(R)
DOI:	10.1103/PhysRevB.86.241103
顯示於類別:	[電機工程學系暨研究所] 期刊論文

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