Electronic and atomic structures of the Sr3Ir4Sn13 single crystal: A possible charge density wave material

doi:10.1038/srep40886

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Title:	Electronic and atomic structures of the Sr3Ir4Sn13 single crystal: A possible charge density wave material
Authors:	Wang, H.-T.;Srivastava, M.K.;Wu, C.-C.;Hsieh, S.-H.;Wang, Y.-F.;Shao, Y.-C.;Liang, Y.-H.;Du, C.-H.;Chiou, J.-W.;Cheng, C.-M.;Chen, J.-L.;Pao, C.-W.;Lee, J.-F.;Kuo, C.N.;Lue, C.S.;Wu, M.-K.;Pong, W.-F.
Date:	2017-01-20
Issue Date:	2017-10-20 02:10:13 (UTC+8)
Abstract:	X-ray scattering (XRS), x-ray absorption near-edge structure (XANES) and extended x-ray absorption fine structure (EXAFS) spectroscopic techniques were used to study the electronic and atomic structures of the high-quality Sr3Ir4Sn13 (SIS) single crystal below and above the transition temperature (T* ≈ 147 K). The evolution of a series of modulated satellite peaks below the transition temperature in the XRS experiment indicated the formation of a possible charge density wave (CDW) in the (110) plane. The EXAFS phase derivative analysis supports the CDW-like formation by revealing different bond distances [Sn1(2)-Sn2] below and above T* in the (110) plane. XANES spectra at the Ir L3-edge and Sn K-edge demonstrated an increase (decrease) in the unoccupied (occupied) density of Ir 5d-derived states and a nearly constant density of Sn 5p-derived states at temperatures T < T* in the (110) plane. These observations clearly suggest that the Ir 5d-derived states are closely related to the anomalous resistivity transition. Accordingly, a close relationship exists between local electronic and atomic structures and the CDW-like phase in the SIS single crystal.
Relation:	Scientific Reports 7, pp.40886(9 pages)
DOI:	10.1038/srep40886
Appears in Collections:	[Graduate Institute & Department of Physics] Journal Article

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