Ultra-low acoustoelectric attenuation in graphene

doi:10.1063/1.4979207

機構典藏 > College of Sciences > Graduate Institute & Department of Physics > Journal Article > Item 987654321/110157

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Title:	Ultra-low acoustoelectric attenuation in graphene
Authors:	Chiu-Chun Tang;Yung-Fu Chen;D. C. Ling;C. C. Chi;Jeng-Chung Chen
Date:	2017-03-29
Issue Date:	2017-03-31 02:10:12 (UTC+8)
Publisher:	AIP
Abstract:	We investigate the acoustoelectric properties of graphene and extract its acoustoelectric attenuation Γ as a function of the carrier density n, tuned via ionic liquid gating. Acoustoelectric effects in graphene are induced by launching surface acoustic waves (SAWs) on a piezoelectric LiNbO3 substrate. We measure the acoustoelectric current Iae through graphene and extract the SAW attenuation factor Γ as a function of n. The magnitude of Iae increases with decreasing n when the n is far from the charge neutral point (CNP). When n is tuned across the CNP, Iae first exhibits a local maximum, vanishes at the CNP, and then changes sign in accordance with the associated change in the carrier polarity. By contrast, Γ monotonically increases with decreasing n and reaches a maximum at the CNP. The extracted values of Γ, calibrated at the central frequency of 189 MHz, vary from ∼0.4 m−1 to 6.8 m−1, much smaller than the values for known two-dimensional systems. Data analysis suggests that the evolution of Iae and Γ with n manifests the electronic states of graphene. Our experimental findings provide insightful information for developing innovative graphene-based devices.
Relation:	Journal of Applied Physics 121(12), 124505(5pages)
DOI:	10.1063/1.4979207
Appears in Collections:	[Graduate Institute & Department of Physics] Journal Article

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